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Transistors / RF Power Field-Effect Transistors / AFT18HW355SR6
AFT18HW355SR6 by:
NXP Semiconductors
Freescale Semiconductor
NXP Semiconductors
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RF POWER, FET

Part Details for AFT18HW355SR6 by NXP Semiconductors

Results Overview of AFT18HW355SR6 by NXP Semiconductors

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AFT18HW355SR6 Information

AFT18HW355SR6 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for AFT18HW355SR6

Part # Distributor Description Stock Price Buy
DISTI # AFT18HW355SR6
EBV Elektronik Transistor RF FET NCH 65V 1805MHz to 1880MHz 4Pin NI1230S TR (Alt: AFT18HW355SR6) RoHS: Compliant Min Qty: 150 Package Multiple: 150 EBV - 0
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Part Details for AFT18HW355SR6

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AFT18HW355SR6 Part Data Attributes

Parametric Data
AFT18HW355SR6 NXP Semiconductors
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AFT18HW355SR6 NXP Semiconductors RF POWER, FET
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.40
Case Connection SOURCE
Configuration SINGLE
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 125 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Time@Peak Reflow Temperature-Max (s) 40

AFT18HW355SR6 Related Parts

AFT18HW355SR6 Frequently Asked Questions (FAQ)

  • NXP provides a recommended PCB layout and thermal management guide in their application note AN11542, which includes guidelines for thermal vias, copper pours, and component placement to ensure optimal performance and thermal dissipation.

  • The selection of input and output capacitors depends on the specific application and operating conditions. NXP recommends using X7R or X5R dielectric capacitors with a voltage rating of at least 2x the maximum input voltage. The capacitance value should be chosen based on the desired ripple voltage and output voltage regulation.

  • The maximum allowed voltage drop across the internal resistance of the AFT18HW355SR6 is typically around 1.5V to 2V, depending on the operating conditions and output current. Exceeding this voltage drop may lead to reduced performance, increased power dissipation, and potential device damage.

  • To ensure EMC and EMI compliance, follow NXP's guidelines for PCB layout, component selection, and shielding. Additionally, consider using EMI filters, common-mode chokes, and shielding components to minimize radiated emissions and conducted noise.

  • NXP provides thermal derating guidelines in the datasheet, which recommend reducing the maximum output current by 1.5% per degree Celsius above 25°C. This ensures the device operates within its safe operating area and prevents thermal runaway.