Datasheets
AFGHL40T65SPD by: onsemi

IGBT, 650V 40A in TO247 providing enhanced Final Test coverage for better and robuster performance., TO-247-3LD, 450-TUBE, Automotive Qualified

Part Details for AFGHL40T65SPD by onsemi

Results Overview of AFGHL40T65SPD by onsemi

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Applications Automotive

AFGHL40T65SPD Information

AFGHL40T65SPD by onsemi is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for AFGHL40T65SPD

Part # Distributor Description Stock Price Buy
DISTI # 84AC6504
Newark Igbt, 650V, 80A, 267W, To-247, Dc Collector Current:80A, Collector Emitter Saturation Voltage Vce(... On):1.85V, Power Dissipation Pd:267W, Collector Emitter Voltage V(Br)Ceo:650V, Transistor Case Style:To-247, No. Of Pins:3Pins, Rohs Compliant: Yes |Onsemi AFGHL40T65SPD more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 364
  • 1 $6.4300
  • 10 $6.2500
  • 25 $5.6300
  • 50 $5.2500
$5.2500 / $6.4300 Buy Now
DISTI # AFGHL40T65SPDOS-ND
DigiKey IGBT TRENCH FS 650V 80A TO-247-3 Min Qty: 1 Lead time: 11 Weeks Container: Tube 795
In Stock
  • 1 $5.1400
  • 30 $3.0590
$3.0590 / $5.1400 Buy Now
DISTI # AFGHL40T65SPD
Avnet Americas Transistor I GBT N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: AFGHL40T65SPD) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 11 Weeks, 0 Days Container: Tube 252900 Factory Stock
  • 450 $3.1373
  • 900 $3.0211
  • 1,800 $2.9132
  • 2,700 $2.8128
  • 3,600 $2.7902
$2.7902 / $3.1373 Buy Now
DISTI # 863-AFGHL40T65SPD
Mouser Electronics IGBTs FS3 T TO247 40A 65 2174
  • 1 $4.3700
  • 10 $4.3100
  • 30 $3.0500
$3.0500 / $4.3700 Buy Now
Onlinecomponents.com Trans IGBT Chip N-CH 650V 80A 267000mW Automotive 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant 0
  • 113 $6.3300
  • 225 $3.9200
  • 338 $3.1000
  • 450 $3.0300
$3.0300 / $6.3300 Buy Now
ComSIT USA AVAILABLE EU 33631
RFQ
DISTI # AFGHL40T65SPD
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ
DISTI # AFGHL40T65SPD
Avnet Silica Transistor I GBT NCH 650V 80A 3Pin TO247 Tube (Alt: AFGHL40T65SPD) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 12 Weeks, 0 Days Silica - 0
Buy Now
DISTI # AFGHL40T65SPD
EBV Elektronik Transistor I GBT NCH 650V 80A 3Pin TO247 Tube (Alt: AFGHL40T65SPD) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
DISTI # AFGHL40T65SPD
EBV Elektronik Transistor I GBT NCH 650V 80A 3Pin TO247 Tube (Alt: AFGHL40T65SPD) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 25 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock 200000
RFQ
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 30 180
  • 60 $4.2000
  • 180 $3.9200
$3.9200 / $4.2000 Buy Now

Part Details for AFGHL40T65SPD

AFGHL40T65SPD CAD Models

AFGHL40T65SPD Part Data Attributes

AFGHL40T65SPD onsemi
Buy Now Datasheet
Compare Parts:
AFGHL40T65SPD onsemi IGBT, 650V 40A in TO247 providing enhanced Final Test coverage for better and robuster performance., TO-247-3LD, 450-TUBE, Automotive Qualified
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-247-3LD
Manufacturer Package Code 340CX
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 11 Weeks
Date Of Intro 2018-07-20
Samacsys Manufacturer onsemi
Additional Feature LOW CONDUCTION LOSS
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 20 V
Gate-Emitter Voltage-Max 7.5 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 267 W
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 48 ns
Turn-on Time-Nom (ton) 56 ns
VCEsat-Max 2.4 V

AFGHL40T65SPD Frequently Asked Questions (FAQ)

  • A good PCB layout should prioritize thermal dissipation, with a solid ground plane and thermal vias. A heat sink or thermal interface material can be used to improve heat dissipation. Consult onsemi's application notes for specific guidance.

  • Implement a robust thermal monitoring and protection scheme, including over-temperature protection (OTP) and over-current protection (OCP). Ensure proper thermal design, and consider using a thermistor or thermocouple for temperature monitoring.

  • Use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, and consider using EMI filters or shielding. Ensure that the device is properly decoupled, and follow onsemi's recommendations for EMI mitigation.

  • Optimize the gate drive circuit by selecting the right gate resistor value, ensuring proper gate-source voltage, and minimizing parasitic inductance. Consult onsemi's application notes for specific guidance on gate drive optimization.

  • Operating at high temperatures can reduce the device's lifespan. Ensure proper thermal design, and consider derating the device's power handling at high temperatures. Consult onsemi's reliability data and application notes for specific guidance.