Part Details for AFGHL25T120RHD by onsemi
Results Overview of AFGHL25T120RHD by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AFGHL25T120RHD Information
AFGHL25T120RHD by onsemi is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AFGHL25T120RHD
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
AFGHL25T120RHD
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EBV Elektronik | Transistor IGBT Chip NChannel 12KV 48A 3Pin TO247 TR (Alt: AFGHL25T120RHD) RoHS: Not Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Part Details for AFGHL25T120RHD
AFGHL25T120RHD CAD Models
AFGHL25T120RHD Part Data Attributes
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AFGHL25T120RHD
onsemi
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Datasheet
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AFGHL25T120RHD
onsemi
IGBT - Automotive Grade low cost 1200 V 25 A IGBT 1200 V 25 A, TO-247-3LD, 450-TUBE, Automotive Qualified
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-247-3LD | |
Manufacturer Package Code | 340CX | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 59 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 48 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 7.3 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 261 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 219 ns | |
Turn-on Time-Nom (ton) | 43 ns | |
VCEsat-Max | 2.4 V |