Datasheets
AFGHL25T120RHD by: onsemi

IGBT - Automotive Grade low cost 1200 V 25 A IGBT 1200 V 25 A, TO-247-3LD, 450-TUBE, Automotive Qualified

Part Details for AFGHL25T120RHD by onsemi

Results Overview of AFGHL25T120RHD by onsemi

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AFGHL25T120RHD Information

AFGHL25T120RHD by onsemi is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for AFGHL25T120RHD

Part # Distributor Description Stock Price Buy
DISTI # AFGHL25T120RHD
EBV Elektronik Transistor IGBT Chip NChannel 12KV 48A 3Pin TO247 TR (Alt: AFGHL25T120RHD) RoHS: Not Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for AFGHL25T120RHD

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AFGHL25T120RHD Part Data Attributes

AFGHL25T120RHD onsemi
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AFGHL25T120RHD onsemi IGBT - Automotive Grade low cost 1200 V 25 A IGBT 1200 V 25 A, TO-247-3LD, 450-TUBE, Automotive Qualified
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-247-3LD
Manufacturer Package Code 340CX
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 59 Weeks
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 48 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7.3 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 261 W
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 219 ns
Turn-on Time-Nom (ton) 43 ns
VCEsat-Max 2.4 V