Part Details for A3T21H400W23SR6 by NXP Semiconductors
Overview of A3T21H400W23SR6 by NXP Semiconductors
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for A3T21H400W23SR6
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
73AC6874
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Newark | Airfast Rf Power Ldmos Transistor, 2110-2200 Mhz, 71 W Avg., 28 V /Reel Rohs Compliant: Yes |Nxp A3T21H400W23SR6 Min Qty: 150 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$75.0700 | Buy Now |
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DISTI #
568-A3T21H400W23SR6TR-ND
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DigiKey | RF MOSFET LDMOS Min Qty: 150 Lead time: 10 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$78.7754 | Buy Now |
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DISTI #
A3T21H400W23SR6
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Avnet Americas | Trans RF FET N-CH 65V 6-Pin AC-1230S T/R - Tape and Reel (Alt: A3T21H400W23SR6) RoHS: Compliant Min Qty: 150 Package Multiple: 150 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$72.7176 / $83.8598 | Buy Now |
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DISTI #
771-A3T21H400W23SR6
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Mouser Electronics | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg., 28 V RoHS: Compliant | 0 |
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$75.9000 | Order Now |
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Future Electronics | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg RoHS: Compliant pbFree: Yes Min Qty: 150 Package Multiple: 150 Lead time: 10 Weeks Container: Reel | 0Reel |
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$71.5200 | Buy Now |
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DISTI #
A3T21H400W23SR6
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 40 |
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$80.6100 / $89.2800 | Buy Now |
Part Details for A3T21H400W23SR6
A3T21H400W23SR6 CAD Models
A3T21H400W23SR6 Part Data Attributes
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A3T21H400W23SR6
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
A3T21H400W23SR6
NXP Semiconductors
RF Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Factory Lead Time | 10 Weeks | |
| Configuration | COMPLEX | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-CQFP-F6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 14.5 dB | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | QUAD | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |