Datasheets
A3T18H400W23SR6 by: NXP Semiconductors

RF Power Field-Effect Transistor

Part Details for A3T18H400W23SR6 by NXP Semiconductors

Overview of A3T18H400W23SR6 by NXP Semiconductors

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Price & Stock for A3T18H400W23SR6

Part # Distributor Description Stock Price Buy
DISTI # 47AC8093
Newark Airfast Rf Power Ldmos Transistor, 1805-1880 Mhz, 71 W Avg., 28 V/ Reel Rohs Compliant: Yes |Nxp A3T18H400W23SR6 RoHS: Compliant Min Qty: 150 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $74.5400
$74.5400 Buy Now
DISTI # A3T18H400W23SR6-ND
DigiKey RF MOSFET LDMOS 28V ACP1230S-4 Min Qty: 150 Lead time: 10 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 150 $79.9072
$79.9072 Buy Now
DISTI # A3T18H400W23SR6
Avnet Americas RF Power LDMOS Transistor 1805MHz to 1880MHz 71W 28V 6-Pin CFM6F T/R - Tape and Reel (Alt: A3T18H400W23SR6) RoHS: Compliant Min Qty: 150 Package Multiple: 150 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 150 $77.4424
  • 300 $75.6956
  • 600 $73.9488
  • 900 $72.2020
  • 1,200 $70.4552
$70.4552 / $77.4424 Buy Now
DISTI # 771-A3T18H400W23SR6
Mouser Electronics RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 71 W Avg., 28 V RoHS: Compliant 0
  • 150 $77.1400
$77.1400 Order Now
Future Electronics RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 71 W Avg RoHS: Compliant pbFree: Yes Min Qty: 150 Package Multiple: 150 Lead time: 16 Weeks Container: Reel 0
Reel
  • 150 $71.0100
$71.0100 Buy Now
DISTI # A3T18H400W23SR6
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 0
  • 1 $88.6500
  • 10 $84.8400
  • 25 $82.4900
  • 50 $80.0400
$80.0400 / $88.6500 Buy Now
DISTI # A3T18H400W23SR6
Avnet Silica RF Power LDMOS Transistor 1805MHz to 1880MHz 71W 28V 6-Pin CFM6F T/R (Alt: A3T18H400W23SR6) RoHS: Compliant Min Qty: 150 Package Multiple: 150 Lead time: 18 Weeks, 0 Days Silica - 0
Buy Now
DISTI # A3T18H400W23SR6
EBV Elektronik RF Power LDMOS Transistor 1805MHz to 1880MHz 71W 28V 6-Pin CFM6F T/R (Alt: A3T18H400W23SR6) RoHS: Compliant Min Qty: 150 Package Multiple: 150 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now

Part Details for A3T18H400W23SR6

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A3T18H400W23SR6 Part Data Attributes

A3T18H400W23SR6 NXP Semiconductors
Buy Now Datasheet
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A3T18H400W23SR6 NXP Semiconductors RF Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00
Factory Lead Time 16 Weeks
Samacsys Manufacturer NXP
Configuration COMPLEX
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-CQFP-F6
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225 °C
Operating Temperature-Min -40 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 16 dB
Surface Mount YES
Terminal Form FLAT
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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