Datasheets
A2G35S200-01SR3 by: NXP Semiconductors

RF POWER, FET

Part Details for A2G35S200-01SR3 by NXP Semiconductors

Overview of A2G35S200-01SR3 by NXP Semiconductors

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Price & Stock for A2G35S200-01SR3

Part # Distributor Description Stock Price Buy
DISTI # 01AC8235
Newark Airfast Rf Power Gan Transistor, 3400-3600 Mhz, 40 W Avg., 48 V/ Reel Rohs Compliant: Yes |Nxp A2G35S200-01SR3 Min Qty: 250 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $76.1000
  • 500 $73.6600
  • 1,000 $72.4400
$72.4400 / $76.1000 Buy Now
DISTI # 568-15206-1-ND
DigiKey RF MOSFET GAN HEMT 48V NI400 Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 77
In Stock
  • 1 $138.7300
  • 10 $132.1690
  • 25 $129.3572
$129.3572 / $138.7300 Buy Now
Rochester Electronics A2G35S200-01 - Airfast RF Power GaN Transistor, 3400-3600 MHz, 40 W AVG., 48 V RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 500
  • 1 $97.6500
  • 25 $95.7000
  • 100 $91.7900
  • 500 $87.8900
  • 1,000 $83.0000
$83.0000 / $97.6500 Buy Now

Part Details for A2G35S200-01SR3

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A2G35S200-01SR3 Part Data Attributes

A2G35S200-01SR3 NXP Semiconductors
Buy Now Datasheet
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A2G35S200-01SR3 NXP Semiconductors RF POWER, FET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description ,
Reach Compliance Code compliant
ECCN Code 3A001.B.3
HTS Code 8541.29.00
Date Of Intro 2016-05-16
Samacsys Manufacturer NXP
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40

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