Transistors
ZXMS6003GTA
Description: Power Field-Effect Transistor, 1.6A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN

Overview of ZXMS6003GTA by Diodes Incorporated

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for ZXMS6003GTA by Diodes Incorporated

Part # Manufacturer Description Stock Price Buy
Perfect Parts Corporation   1464
RFQ
South Electronics ZXMS6003GTA 0
RFQ

CAD Models for ZXMS6003GTA by Diodes Incorporated
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Part Data Attributes for ZXMS6003GTA by Diodes Incorporated

ZXMS6003GTA
Diodes Incorporated
-
-
Pbfree Code
No
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
DIODES INC
Part Package Code
TO-261AA
Package Description
SMALL OUTLINE, R-PDSO-G4
Pin Count
4
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Samacsys Manufacturer
Diodes Incorporated
Avalanche Energy Rating (Eas)
550 mJ
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
1.6 A
Drain-source On Resistance-Max
0.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-261AA
JESD-30 Code
R-PDSO-G4
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. ZXMS6003GTA
    Diodes Incorporated
    Power Field-Effect Transistor, 1.6A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
    VS

Alternate Parts for ZXMS6003GTA

This table gives cross-reference parts and alternative options found for ZXMS6003GTA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZXMS6003GTA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
ZXMS6003GTA Power Field-Effect Transistor, 1.6A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Zetex / Diodes Inc ZXMS6003GTA vs ZXMS6003GTA
Part Number Description Manufacturer Compare
EPC8002 Power Field-Effect Transistor, 65V, 0.53ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6 Efficient Power Conversion ZXMS6003GTA vs EPC8002
ZXMS6003GTA Power Field-Effect Transistor, 1.6A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Zetex / Diodes Inc ZXMS6003GTA vs ZXMS6003GTA

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