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Transistors Power Field-Effect Transistors ZXMP6A18DN8TC

Transistors
ZXMP6A18DN8TC
Description: Power Field-Effect Transistor, 3.7A I(D), 60V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

Overview of ZXMP6A18DN8TC by Diodes Incorporated

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for ZXMP6A18DN8TC by Diodes Incorporated

Part # Manufacturer Description Stock Price Buy
DISTI # ZXMP6A18DN8TC
Avnet Americas Transistor MOSFET Array Dual P-CH 60V 4.8A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMP6A18DN8TC) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
RFQ
Future Electronics 60 V 4. 8A Dual P-CH Surface Mount Transistor MOSFET Array - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel 0
Reel
  • 2,500 $0.5150
  • 5,000 $0.5050
  • 7,500 $0.4950
$0.4950 / $0.5150 Buy Now
Future Electronics 60 V 4. 8A Dual P-CH Surface Mount Transistor MOSFET Array - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel 0
Reel
  • 2,500 $0.5150
  • 5,000 $0.5050
  • 7,500 $0.4950
$0.4950 / $0.5150 Buy Now
DISTI # ZXMP6A18DN8TC
Avnet Silica Transistor MOSFET Array Dual P-CH 60V 4.8A 8-Pin SOIC T/R (Alt: ZXMP6A18DN8TC) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Silica - 17500
Buy Now
New Advantage Corporation SO 8 / DUAL P-CHANNEL 60V MOSFET (UMOS) RoHS: Compliant Min Qty: 1 Package Multiple: 2500 15000
  • 2,500 $0.7249
  • 15,000 $0.6708
$0.6708 / $0.7249 Buy Now

CAD Models for ZXMP6A18DN8TC by Diodes Incorporated
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Part Data Attributes for ZXMP6A18DN8TC by Diodes Incorporated
Parametric Data

ZXMP6A18DN8TC
Diodes Incorporated
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
DIODES INC
Part Package Code
SOT
Package Description
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Diodes Incorporated
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
3.7 A
Drain-source On Resistance-Max
0.055 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
2.1 W
Pulsed Drain Current-Max (IDM)
23 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. ZXMP6A18DN8TC
    Diodes Incorporated
    Power Field-Effect Transistor, 3.7A I(D), 60V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
    VS

Alternate Parts for ZXMP6A18DN8TC

This table gives cross-reference parts and alternative options found for ZXMP6A18DN8TC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZXMP6A18DN8TC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
ZXMP6A18DN8TC Power Field-Effect Transistor, 3.7A I(D), 60V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Zetex / Diodes Inc ZXMP6A18DN8TC vs ZXMP6A18DN8TC
ZXMP6A18DN8 Power Field-Effect Transistor, 4.4A I(D), 60V, 0.08ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Zetex / Diodes Inc ZXMP6A18DN8TC vs ZXMP6A18DN8
ZXMP6A18DN8TA Power Field-Effect Transistor, 3.7A I(D), 60V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Diodes Incorporated ZXMP6A18DN8TC vs ZXMP6A18DN8TA
ZXMP6A18DN8TA Power Field-Effect Transistor, 3.7A I(D), 60V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Zetex / Diodes Inc ZXMP6A18DN8TC vs ZXMP6A18DN8TA
Part Number Description Manufacturer Compare
ZXMP6A18DN8 Power Field-Effect Transistor, 4.4A I(D), 60V, 0.08ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Zetex / Diodes Inc ZXMP6A18DN8TC vs ZXMP6A18DN8
ZXMP6A18DN8TA Power Field-Effect Transistor, 3.7A I(D), 60V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Diodes Incorporated ZXMP6A18DN8TC vs ZXMP6A18DN8TA
ZXMP6A18DN8TC Power Field-Effect Transistor, 3.7A I(D), 60V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Zetex / Diodes Inc ZXMP6A18DN8TC vs ZXMP6A18DN8TC
ZXMP6A18DN8TA Power Field-Effect Transistor, 3.7A I(D), 60V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Zetex / Diodes Inc ZXMP6A18DN8TC vs ZXMP6A18DN8TA

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