Transistors
ZXMP10A11GTA
Description: Power Field-Effect Transistor, 1.7A I(D), 100V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Overview of ZXMP10A11GTA by Diodes Incorporated

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Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Part Data Attributes for ZXMP10A11GTA by Diodes Incorporated

ZXMP10A11GTA
Diodes Incorporated
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
DIODES INC
Part Package Code
SOT-223
Package Description
SMALL OUTLINE, R-PDSO-G4
Pin Count
4
Reach Compliance Code
unknown
ECCN Code
EAR99
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
1.7 A
Drain-source On Resistance-Max
0.9 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. ZXMP10A11GTA
    Diodes Incorporated
    Power Field-Effect Transistor, 1.7A I(D), 100V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
    VS

Alternate Parts for ZXMP10A11GTA

This table gives cross-reference parts and alternative options found for ZXMP10A11GTA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZXMP10A11GTA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
ZXMP10A11GTC Power Field-Effect Transistor, 1.7A I(D), 100V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Diodes Incorporated ZXMP10A11GTA vs ZXMP10A11GTC
ZXMP10A11G Power Field-Effect Transistor, 1.7A I(D), 100V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Diodes Incorporated ZXMP10A11GTA vs ZXMP10A11G
ZXMP10A11G Power Field-Effect Transistor, 1.7A I(D), 100V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Zetex / Diodes Inc ZXMP10A11GTA vs ZXMP10A11G
Part Number Description Manufacturer Compare
ZXMP10A11GTC Power Field-Effect Transistor, 1.7A I(D), 100V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Diodes Incorporated ZXMP10A11GTA vs ZXMP10A11GTC
ZXMP10A11G Power Field-Effect Transistor, 1.7A I(D), 100V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Diodes Incorporated ZXMP10A11GTA vs ZXMP10A11G
ZXMP10A11G Power Field-Effect Transistor, 1.7A I(D), 100V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Zetex / Diodes Inc ZXMP10A11GTA vs ZXMP10A11G

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