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Small Signal Field-Effect Transistor, 1.9A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
ZXMN10A11GCT-ND
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DigiKey | MOSFET N-CH 100V 1.7A SOT223 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Tape & Reel (TR) |
3974 In Stock |
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$0.2429 / $0.8700 | Buy Now |
DISTI #
ZXMN10A11GTA
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Avnet Americas | Trans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: ZXMN10A11GTA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel | 105000 Factory Stock |
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$0.0284 / $0.0341 | Buy Now |
DISTI #
522-ZXMN10A11GTA
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Mouser Electronics | MOSFETs 100V N-Chnl UMOS RoHS: Compliant | 2775 |
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$0.2450 / $0.8600 | Buy Now |
DISTI #
E02:0323_01120478
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Arrow Electronics | Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Date Code: 2406 | Europe - 3000 |
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$0.2340 / $0.2559 | Buy Now |
DISTI #
V72:2272_06708061
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Arrow Electronics | Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 263 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2338 Container: Cut Strips | Americas - 573 |
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$0.2423 / $0.3800 | Buy Now |
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Future Electronics | ZXMN10A11G Series 100 V 0.35 Ohm N-Channel Enhancement Mode MOSFET -SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Container: Reel | 4000Reel |
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$0.2300 / $0.2550 | Buy Now |
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Future Electronics | ZXMN10A11G Series 100 V 0.35 Ohm N-Channel Enhancement Mode MOSFET -SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.2150 / $0.2400 | Buy Now |
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Bristol Electronics | 892 |
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RFQ | ||
DISTI #
ZXMN10A11GTA
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TME | Transistor: N-MOSFET, unipolar, 100V, 1.9A, 2W, SOT223 Min Qty: 1 | 339 |
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$0.3340 / $0.8730 | Buy Now |
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ComSIT USA | 100V N-CHANNEL ENHANCEMENT MODE MOSFET Power Field-Effect Transistor, 2.4A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
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RFQ |
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ZXMN10A11GTA
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
ZXMN10A11GTA
Diodes Incorporated
Small Signal Field-Effect Transistor, 1.9A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 2.4 A | |
Drain-source On Resistance-Max | 0.35 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 11 pF | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 7.9 A | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-STD-202 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |