Part Details for ZXMN10A08DN8TC by Diodes Incorporated
Overview of ZXMN10A08DN8TC by Diodes Incorporated
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for ZXMN10A08DN8TC
ZXMN10A08DN8TC CAD Models
ZXMN10A08DN8TC Part Data Attributes
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ZXMN10A08DN8TC
Diodes Incorporated
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Datasheet
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ZXMN10A08DN8TC
Diodes Incorporated
Power Field-Effect Transistor, 2.1A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Part Package Code | SOT | |
Package Description | SO-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Diodes Incorporated | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 1.6 A | |
Drain-source On Resistance-Max | 0.25 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 14.2 pF | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.25 W | |
Pulsed Drain Current-Max (IDM) | 9 A | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-STD-202 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for ZXMN10A08DN8TC
This table gives cross-reference parts and alternative options found for ZXMN10A08DN8TC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZXMN10A08DN8TC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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ZXMN10A08DN8TA | Power Field-Effect Transistor, 2.1A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Diodes Incorporated | ZXMN10A08DN8TC vs ZXMN10A08DN8TA |
ZXMN10A08DN8TA | Power Field-Effect Transistor, 2.1A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Zetex / Diodes Inc | ZXMN10A08DN8TC vs ZXMN10A08DN8TA |