Part Details for YJQ30N03AF1 by Yangzhou Yangjie Electronics Co Ltd
Overview of YJQ30N03AF1 by Yangzhou Yangjie Electronics Co Ltd
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Robotics and Drones
Part Details for YJQ30N03AF1
YJQ30N03AF1 CAD Models
YJQ30N03AF1 Part Data Attributes
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YJQ30N03AF1
Yangzhou Yangjie Electronics Co Ltd
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Datasheet
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YJQ30N03AF1
Yangzhou Yangjie Electronics Co Ltd
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2020-09-28 | |
| Avalanche Energy Rating (Eas) | 112 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 164 pF | |
| JESD-30 Code | S-PDSO-N8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 21 W | |
| Pulsed Drain Current-Max (IDM) | 115 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |