Datasheets
YJL2312A by: Yangzhou Yangjie Electronics Co Ltd

Power Field-Effect Transistor,

Part Details for YJL2312A by Yangzhou Yangjie Electronics Co Ltd

Overview of YJL2312A by Yangzhou Yangjie Electronics Co Ltd

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Applications Education and Research Industrial Automation Electronic Manufacturing

Price & Stock for YJL2312A

Part # Distributor Description Stock Price Buy
DISTI # YJL2312A-YAN
TME Transistor: N-MOSFET, TRENCH POWER LV, unipolar, 20V, 5.4A, 1.2W Min Qty: 20 0
  • 20 $0.0504
  • 100 $0.0454
  • 500 $0.0403
  • 3,000 $0.0360
$0.0360 / $0.0504 RFQ

Part Details for YJL2312A

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YJL2312A Part Data Attributes:

YJL2312A Yangzhou Yangjie Electronics Co Ltd
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YJL2312A Yangzhou Yangjie Electronics Co Ltd Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer YANGZHOU YANGJIE ELECTRONICS CO LTD
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2020-09-24
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 6.8 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 117 pF
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.25 W
Power Dissipation-Max (Abs) 1.25 W
Pulsed Drain Current-Max (IDM) 27 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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