Part Details for XR-A111-1JE-FBTA-30M0000000 by Microsemi Corporation
Overview of XR-A111-1JE-FBTA-30M0000000 by Microsemi Corporation
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| HFA1112IBZ96 | Renesas Electronics Corporation | 850MHz, Low Distortion Programmable Gain Buffer Amplifier, SOICN, /Reel | |
| HFA1112IBZ | Renesas Electronics Corporation | 850MHz, Low Distortion Programmable Gain Buffer Amplifier, SOICN, /Tube | |
| U77A1110800BP | Amphenol Communications Solutions | PLASTIC DUST COVER |
Part Details for XR-A111-1JE-FBTA-30M0000000
XR-A111-1JE-FBTA-30M0000000 CAD Models
XR-A111-1JE-FBTA-30M0000000 Part Data Attributes
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XR-A111-1JE-FBTA-30M0000000
Microsemi Corporation
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XR-A111-1JE-FBTA-30M0000000
Microsemi Corporation
Parallel - Fundamental Quartz Crystal, 30MHz Nom, HC49/U, 2 PIN
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | HC49/U, 2 PIN | |
| Reach Compliance Code | compliant | |
| HTS Code | 8541.60.00.60 | |
| Additional Feature | AT-CUT | |
| Aging | 3 PPM/YEAR | |
| Crystal/Resonator Type | PARALLEL - FUNDAMENTAL | |
| Drive Level | 50 µW | |
| Frequency Stability | 0.0025% | |
| Frequency Tolerance | 10 ppm | |
| Load Capacitance | 32 pF | |
| Mounting Feature | THROUGH HOLE MOUNT | |
| Operating Frequency-Nom | 30 MHz | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Physical Dimension | L11.05XB4.24XH13.46 (mm)/L0.435XB0.167XH0.53 (inch) | |
| Series Resistance | 25 Ω | |
| Surface Mount | NO |