Part Details for WED3DG6464V10D2 by Microsemi Corporation
Overview of WED3DG6464V10D2 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for WED3DG6464V10D2
WED3DG6464V10D2 CAD Models
WED3DG6464V10D2 Part Data Attributes
|
|
WED3DG6464V10D2
Microsemi Corporation
Buy Now
Datasheet
|
Compare Parts:
WED3DG6464V10D2
Microsemi Corporation
Synchronous DRAM Module, 64MX64, CMOS, DIMM-168
|
| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | DIMM | |
| Package Description | , | |
| Pin Count | 168 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XDMA-N168 | |
| Memory Density | 4294967296 bit | |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 168 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for WED3DG6464V10D2
This table gives cross-reference parts and alternative options found for WED3DG6464V10D2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of WED3DG6464V10D2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYM72V64636BT8-K | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | SK Hynix Inc | WED3DG6464V10D2 vs HYM72V64636BT8-K |
| W3DG6463V10D2-SG | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | Microsemi Corporation | WED3DG6464V10D2 vs W3DG6463V10D2-SG |
| M366S6453DTU-C1L | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | Samsung Semiconductor | WED3DG6464V10D2 vs M366S6453DTU-C1L |
| MT8LSDT6464AY-13EXX | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, LEAD FREE, MO-161, DIMM-168 | Micron Technology Inc | WED3DG6464V10D2 vs MT8LSDT6464AY-13EXX |
| W3DG6463V75D2-MG | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, ROHS COMPLIANT, DIMM-168 | Microsemi Corporation | WED3DG6464V10D2 vs W3DG6463V75D2-MG |
| W3DG6463V7D2-S | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | Microsemi Corporation | WED3DG6464V10D2 vs W3DG6463V7D2-S |
| V436664S24VBTG-75PC | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | Mosel Vitelic Corporation | WED3DG6464V10D2 vs V436664S24VBTG-75PC |
| W3DG6363V7D2-GG | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | Microsemi Corporation | WED3DG6464V10D2 vs W3DG6363V7D2-GG |
| HYS64V64220GU-7.5-C2 | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | Infineon Technologies AG | WED3DG6464V10D2 vs HYS64V64220GU-7.5-C2 |
| HYS64V64220GU-8 | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | Siemens | WED3DG6464V10D2 vs HYS64V64220GU-8 |