Datasheets
W971GG6IB-25 by: Winbond Electronics Corp

DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84

Part Details for W971GG6IB-25 by Winbond Electronics Corp

Overview of W971GG6IB-25 by Winbond Electronics Corp

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Part Details for W971GG6IB-25

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W971GG6IB-25 Part Data Attributes

W971GG6IB-25 Winbond Electronics Corp
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W971GG6IB-25 Winbond Electronics Corp DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer WINBOND ELECTRONICS CORP
Part Package Code BGA
Package Description WBGA-84
Pin Count 84
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
Length 12.5 mm
Memory Density 1073741824 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 64MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.01 A
Supply Current-Max 0.385 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm

Alternate Parts for W971GG6IB-25

This table gives cross-reference parts and alternative options found for W971GG6IB-25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W971GG6IB-25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
W971GG6JB-25 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 Winbond Electronics Corp W971GG6IB-25 vs W971GG6JB-25
Part Number Description Manufacturer Compare
K4T1G164QQ-HLE70 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Samsung Semiconductor W971GG6IB-25 vs K4T1G164QQ-HLE70
NT5TB64M16DG-AD DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 0.80 MM PITCH, ROHS COMPLIANT, BGA-84 Nanya Technology Corporation W971GG6IB-25 vs NT5TB64M16DG-AD
K4T1G164QE-HLF70 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Samsung Semiconductor W971GG6IB-25 vs K4T1G164QE-HLF70
MT47H64M16B7-25E:D DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 10 X 16.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc W971GG6IB-25 vs MT47H64M16B7-25E:D
MT47H64M16HR-25E:HTR DDR DRAM, 64KX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc W971GG6IB-25 vs MT47H64M16HR-25E:HTR
MT47H64M16NF-25EIT:MT DDR DRAM, Micron Technology Inc W971GG6IB-25 vs MT47H64M16NF-25EIT:MT
MT47H64M16B7-25EL:D DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 10 X 16.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc W971GG6IB-25 vs MT47H64M16B7-25EL:D
HYB18TC1G160BF-2.5 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG W971GG6IB-25 vs HYB18TC1G160BF-2.5
K4T1G164QD-ZCE70 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor W971GG6IB-25 vs K4T1G164QD-ZCE70
K4T1G164QQ-HCE70 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Samsung Semiconductor W971GG6IB-25 vs K4T1G164QQ-HCE70

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