Part Details for W971GG6IB-25 by Winbond Electronics Corp
Overview of W971GG6IB-25 by Winbond Electronics Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for W971GG6IB-25
W971GG6IB-25 CAD Models
W971GG6IB-25 Part Data Attributes
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W971GG6IB-25
Winbond Electronics Corp
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Datasheet
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W971GG6IB-25
Winbond Electronics Corp
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | WINBOND ELECTRONICS CORP | |
| Part Package Code | BGA | |
| Package Description | WBGA-84 | |
| Pin Count | 84 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 400 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B84 | |
| Length | 12.5 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 84 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA84,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.01 A | |
| Supply Current-Max | 0.385 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 8 mm |
Alternate Parts for W971GG6IB-25
This table gives cross-reference parts and alternative options found for W971GG6IB-25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W971GG6IB-25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| K4T1G164QQ-HCE70 | Samsung Semiconductor | Check for Price | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | W971GG6IB-25 vs K4T1G164QQ-HCE70 |
| K4T1G164QQ-HLE70 | Samsung Semiconductor | Check for Price | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | W971GG6IB-25 vs K4T1G164QQ-HLE70 |
| MT47H32M16GC-25AT:B | Micron Technology Inc | Check for Price | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 12 X 12.50 MM, FBGA-84 | W971GG6IB-25 vs MT47H32M16GC-25AT:B |
| HYB18T1G160BF-2.5F | Qimonda AG | Check for Price | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | W971GG6IB-25 vs HYB18T1G160BF-2.5F |
| NT5TU64M16HG-AC | Nanya Technology Corporation | Check for Price | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84 | W971GG6IB-25 vs NT5TU64M16HG-AC |
| HYB18TC1G160CF-2.5 | Qimonda AG | Check for Price | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | W971GG6IB-25 vs HYB18TC1G160CF-2.5 |
| K4N1G164QQ-HC250 | Samsung Semiconductor | Check for Price | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | W971GG6IB-25 vs K4N1G164QQ-HC250 |
| MT47H64M16B7-25:D | Micron Technology Inc | Check for Price | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 10 X 16.50 MM, ROHS COMPLIANT, FBGA-84 | W971GG6IB-25 vs MT47H64M16B7-25:D |
| W971GG6JB-25 | Winbond Electronics Corp | Check for Price | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 | W971GG6IB-25 vs W971GG6JB-25 |
| MT47H64M16HR-25ELAIT:H | Micron Technology Inc | Check for Price | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, FBGA-84 | W971GG6IB-25 vs MT47H64M16HR-25ELAIT:H |