Part Details for W949D2CBJX6E by Winbond Electronics Corp
Overview of W949D2CBJX6E by Winbond Electronics Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for W949D2CBJX6E
W949D2CBJX6E CAD Models
W949D2CBJX6E Part Data Attributes
|
|
W949D2CBJX6E
Winbond Electronics Corp
Buy Now
Datasheet
|
Compare Parts:
W949D2CBJX6E
Winbond Electronics Corp
DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | WINBOND ELECTRONICS CORP | |
| Part Package Code | BGA | |
| Package Description | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 | |
| Pin Count | 90 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8,16 | |
| JESD-30 Code | R-PBGA-B90 | |
| Length | 13 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | LPDDR1 DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -25 °C | |
| Organization | 16MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.025 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8,16 | |
| Standby Current-Max | 0.00001 A | |
| Supply Current-Max | 0.075 mA | |
| Supply Voltage-Max (Vsup) | 1.95 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 8 mm |
Alternate Parts for W949D2CBJX6E
This table gives cross-reference parts and alternative options found for W949D2CBJX6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W949D2CBJX6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT48H16M32LGB5-6AIT:C | Synchronous DRAM, 16MX32, 5ns, CMOS, PBGA90, VFBGA-90 | Micron Technology Inc | W949D2CBJX6E vs MT48H16M32LGB5-6AIT:C |
| MT48H16M32LFB5-6AAT | Synchronous DRAM, 16MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 | Micron Technology Inc | W949D2CBJX6E vs MT48H16M32LFB5-6AAT |
| MT48H16M32LGB5-6LAT:C | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, VFBGA-90 | Micron Technology Inc | W949D2CBJX6E vs MT48H16M32LGB5-6LAT:C |
| H5MS5122DFR-E3M | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN AND LEAD FREE, FBGA-90 | SK Hynix Inc | W949D2CBJX6E vs H5MS5122DFR-E3M |
| EDD51323CBH-6DLS-E | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 | Elpida Memory Inc | W949D2CBJX6E vs EDD51323CBH-6DLS-E |
| MT48H16M32LFB5-6AIT:C | Synchronous DRAM, 16MX32, 5ns, CMOS, PBGA90, VFBGA-90 | Micron Technology Inc | W949D2CBJX6E vs MT48H16M32LFB5-6AIT:C |
| EDD51321DBH-6ETS-F | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 | Elpida Memory Inc | W949D2CBJX6E vs EDD51321DBH-6ETS-F |
| MT48H16M32LGB5-6L:C | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 13 X 8 MM, GREEN, PLASTIC, VFBGA-90 | Micron Technology Inc | W949D2CBJX6E vs MT48H16M32LGB5-6L:C |
| MT48H16M32LFB5-6LIT:C | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 13 X 8 MM, GREEN, PLASTIC, VFBGA-90 | Micron Technology Inc | W949D2CBJX6E vs MT48H16M32LFB5-6LIT:C |
| MT48H16M32LGB5-6LAIT:C | Synchronous DRAM, 16MX32, 5ns, CMOS, PBGA90, VFBGA-90 | Micron Technology Inc | W949D2CBJX6E vs MT48H16M32LGB5-6LAIT:C |