Part Details for W3J512M32GT-1066B2I by Microsemi Corporation
Overview of W3J512M32GT-1066B2I by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Consumer Electronics
Computing and Data Storage
Part Details for W3J512M32GT-1066B2I
W3J512M32GT-1066B2I CAD Models
W3J512M32GT-1066B2I Part Data Attributes
|
|
W3J512M32GT-1066B2I
Microsemi Corporation
Buy Now
Datasheet
|
Compare Parts:
W3J512M32GT-1066B2I
Microsemi Corporation
DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA204, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-204
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-204 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | SINGLE BANK PAGE BURST | |
| Access Time-Max | 0.3 ns | |
| Additional Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED | |
| Clock Frequency-Max (fCLK) | 533 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 8 | |
| JESD-30 Code | R-PBGA-B204 | |
| Length | 14.6 mm | |
| Memory Density | 17179869184 bit | |
| Memory IC Type | DDR3 DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 204 | |
| Number of Words | 536870912 words | |
| Number of Words Code | 512000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 512MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | FBGA | |
| Package Equivalence Code | BGA204,12X17,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 3.84 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 8 | |
| Standby Current-Max | 0.072 A | |
| Supply Current-Max | 0.76 mA | |
| Supply Voltage-Max (Vsup) | 1.575 V | |
| Supply Voltage-Min (Vsup) | 1.425 V | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 10.1 mm |
Alternate Parts for W3J512M32GT-1066B2I
This table gives cross-reference parts and alternative options found for W3J512M32GT-1066B2I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W3J512M32GT-1066B2I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| W3J512M32K-1066BI | DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA136, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-136 | Microsemi Corporation | W3J512M32GT-1066B2I vs W3J512M32K-1066BI |
| W3J512M32K-1066BM | DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA136, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-136 | Microsemi Corporation | W3J512M32GT-1066B2I vs W3J512M32K-1066BM |
| W3J512M32GT-1066B2M | DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA204, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-204 | Microsemi Corporation | W3J512M32GT-1066B2I vs W3J512M32GT-1066B2M |
| W3J512M32G-1066BM | DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA136, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-136 | Microsemi Corporation | W3J512M32GT-1066B2I vs W3J512M32G-1066BM |
| W3J512M32KT-1066B2C | DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA204, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-204 | Microsemi Corporation | W3J512M32GT-1066B2I vs W3J512M32KT-1066B2C |
| W3J512M32KT-1066B2I | DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA204, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-204 | Microsemi Corporation | W3J512M32GT-1066B2I vs W3J512M32KT-1066B2I |
| W3J512M32KT-1066B2M | DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA204, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-204 | Microsemi Corporation | W3J512M32GT-1066B2I vs W3J512M32KT-1066B2M |
| W3J512M32K-1066BC | DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA136, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-136 | Microsemi Corporation | W3J512M32GT-1066B2I vs W3J512M32K-1066BC |
| W3J512M32G-1066BC | DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA136, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-136 | Microsemi Corporation | W3J512M32GT-1066B2I vs W3J512M32G-1066BC |
| W3J512M32G-1066BI | DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA136, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-136 | Microsemi Corporation | W3J512M32GT-1066B2I vs W3J512M32G-1066BI |