Datasheets
W3E64M16S-266SBC by:

DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, BGA-60

Part Details for W3E64M16S-266SBC by Microsemi Corporation

Overview of W3E64M16S-266SBC by Microsemi Corporation

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Applications Consumer Electronics Computing and Data Storage

Part Details for W3E64M16S-266SBC

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W3E64M16S-266SBC Part Data Attributes

W3E64M16S-266SBC Microsemi Corporation
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W3E64M16S-266SBC Microsemi Corporation DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, BGA-60
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Part Package Code BGA
Package Description BGA, BGA60,9X12,40/32
Pin Count 60
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.75 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PBGA-B60
Length 12.5 mm
Memory Density 1073741824 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 64MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code BGA
Package Equivalence Code BGA60,9X12,40/32
Package Shape RECTANGULAR
Package Style GRID ARRAY
Peak Reflow Temperature (Cel) 240
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 2.56 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.01 A
Supply Current-Max 0.8 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 10 mm

Alternate Parts for W3E64M16S-266SBC

This table gives cross-reference parts and alternative options found for W3E64M16S-266SBC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W3E64M16S-266SBC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
W3E64M16S-266NBC DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60 Microsemi Corporation W3E64M16S-266SBC vs W3E64M16S-266NBC
W3E64M16S-266SBI DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, BGA-60 Mercury Systems Inc W3E64M16S-266SBC vs W3E64M16S-266SBI
W3E64M16S-266NBM DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60 Mercury Systems Inc W3E64M16S-266SBC vs W3E64M16S-266NBM
W3E64M16S-266SBM DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, BGA-60 Microsemi Corporation W3E64M16S-266SBC vs W3E64M16S-266SBM
W3E64M16S-266NBM DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60 Microsemi Corporation W3E64M16S-266SBC vs W3E64M16S-266NBM
W3E64M16S-266SBI DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, BGA-60 Microsemi Corporation W3E64M16S-266SBC vs W3E64M16S-266SBI
Part Number Description Manufacturer Compare
MT47H64M16HV-25AT:E DDR DRAM, 64MX16, 0.35ns, CMOS, PBGA60, PLASTIC, FBGA-60 Micron Technology Inc W3E64M16S-266SBC vs MT47H64M16HV-25AT:E
MT46H64M16LGCK-6:A DDR DRAM, 64MX16, 5.5ns, CMOS, PBGA60, 10 X 11.50 MM, GREEN, PLASTIC, VFBGA-60 Micron Technology Inc W3E64M16S-266SBC vs MT46H64M16LGCK-6:A
MT47H64M16HQ-25EAT:G DDR DRAM, 64MX16, 0.35ns, CMOS, PBGA60, ROHS COMPLAINT, PLASTIC, FBGA-60 Micron Technology Inc W3E64M16S-266SBC vs MT47H64M16HQ-25EAT:G
K4X1G163PC-FEC30 DDR DRAM, 64MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60 Samsung Semiconductor W3E64M16S-266SBC vs K4X1G163PC-FEC30
MT47H64M16JN-3EAT:H DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 Micron Technology Inc W3E64M16S-266SBC vs MT47H64M16JN-3EAT:H
MT46V16M16BG-75EL:G DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, (8 X 14) MM, LEAD FREE,PLASTIC, FBGA-60 Micron Technology Inc W3E64M16S-266SBC vs MT46V16M16BG-75EL:G
MT47H64M16HV-187EAT:E DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA60, PLASTIC, FBGA-60 Micron Technology Inc W3E64M16S-266SBC vs MT47H64M16HV-187EAT:E
MT47H64M16JN-3L:H DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 Micron Technology Inc W3E64M16S-266SBC vs MT47H64M16JN-3L:H
MT47J64M16HQ-187E:E DDR DRAM, 64MX16, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc W3E64M16S-266SBC vs MT47J64M16HQ-187E:E
MT47H64M16JN-3:H DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 Micron Technology Inc W3E64M16S-266SBC vs MT47H64M16JN-3:H

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