Part Details for W3E64M16S-266SBC by Microsemi Corporation
Overview of W3E64M16S-266SBC by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for W3E64M16S-266SBC
W3E64M16S-266SBC CAD Models
W3E64M16S-266SBC Part Data Attributes
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W3E64M16S-266SBC
Microsemi Corporation
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Datasheet
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W3E64M16S-266SBC
Microsemi Corporation
DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, BGA-60
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Part Package Code | BGA | |
Package Description | BGA, BGA60,9X12,40/32 | |
Pin Count | 60 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.75 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | R-PBGA-B60 | |
Length | 12.5 mm | |
Memory Density | 1073741824 bit | |
Memory IC Type | DDR1 DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 60 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 64MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | BGA | |
Package Equivalence Code | BGA60,9X12,40/32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY | |
Peak Reflow Temperature (Cel) | 240 | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 2.56 mm | |
Self Refresh | YES | |
Sequential Burst Length | 2,4,8 | |
Standby Current-Max | 0.01 A | |
Supply Current-Max | 0.8 mA | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Width | 10 mm |
Alternate Parts for W3E64M16S-266SBC
This table gives cross-reference parts and alternative options found for W3E64M16S-266SBC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W3E64M16S-266SBC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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W3E64M16S-266NBC | DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60 | Microsemi Corporation | W3E64M16S-266SBC vs W3E64M16S-266NBC |
W3E64M16S-266SBI | DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, BGA-60 | Mercury Systems Inc | W3E64M16S-266SBC vs W3E64M16S-266SBI |
W3E64M16S-266NBM | DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60 | Mercury Systems Inc | W3E64M16S-266SBC vs W3E64M16S-266NBM |
W3E64M16S-266SBM | DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, BGA-60 | Microsemi Corporation | W3E64M16S-266SBC vs W3E64M16S-266SBM |
W3E64M16S-266NBM | DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60 | Microsemi Corporation | W3E64M16S-266SBC vs W3E64M16S-266NBM |
W3E64M16S-266SBI | DDR DRAM, 64MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, BGA-60 | Microsemi Corporation | W3E64M16S-266SBC vs W3E64M16S-266SBI |