Part Details for VR4CU326428DTH by Viking Technology
Overview of VR4CU326428DTH by Viking Technology
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for VR4CU326428DTH
VR4CU326428DTH CAD Models
VR4CU326428DTH Part Data Attributes
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VR4CU326428DTH
Viking Technology
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Datasheet
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VR4CU326428DTH
Viking Technology
DDR DRAM Module, 32MX64, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VIKING TECHNOLOGY | |
| Part Package Code | DIMM | |
| Package Description | DIMM, | |
| Pin Count | 184 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | SINGLE BANK PAGE BURST | |
| Access Time-Max | 0.75 ns | |
| Additional Feature | AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX | |
| JESD-30 Code | R-XDMA-N184 | |
| Length | 133.35 mm | |
| Memory Density | 2147483648 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 184 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Seated Height-Max | 31.75 mm | |
| Self Refresh | YES | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 3.81 mm |
Alternate Parts for VR4CU326428DTH
This table gives cross-reference parts and alternative options found for VR4CU326428DTH. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VR4CU326428DTH, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYMD232M646C6-H | DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200 | SK Hynix Inc | VR4CU326428DTH vs HYMD232M646C6-H |
| W3EG6433S262JD3 | DDR DRAM Module, 32MX64, 0.75ns, CMOS, DIMM-184 | Microsemi Corporation | VR4CU326428DTH vs W3EG6433S262JD3 |
| M368L3313BT1-CB0 | DDR DRAM Module, 32MX64, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | VR4CU326428DTH vs M368L3313BT1-CB0 |
| HYMD232M646CLF6-L | DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200 | SK Hynix Inc | VR4CU326428DTH vs HYMD232M646CLF6-L |
| HYMD532M646L6-H | DDR DRAM Module, 32MX64, 0.75ns, CMOS, 67.60 X 31.75 X 3.80 MM, SODIMM-200 | SK Hynix Inc | VR4CU326428DTH vs HYMD532M646L6-H |
| M368L3313BT0-CA0 | DDR DRAM Module, 32MX64, 0.8ns, CMOS, UDIMM-184 | Samsung Semiconductor | VR4CU326428DTH vs M368L3313BT0-CA0 |
| MT8VDDT3264HG-202XX | DDR DRAM Module, 32MX64, 0.8ns, CMOS, MO-224, SODIMM-200 | Micron Technology Inc | VR4CU326428DTH vs MT8VDDT3264HG-202XX |
| W3EG6432S263D3 | DDR DRAM Module, 32MX64, 0.75ns, CMOS, DIMM-184 | Microsemi Corporation | VR4CU326428DTH vs W3EG6432S263D3 |
| W3EG6432S265D4IF | DDR DRAM Module, 32MX64, 0.75ns, CMOS, LEAD FREE, SO-DIMM-200 | Microsemi Corporation | VR4CU326428DTH vs W3EG6432S265D4IF |
| MT8VDDT3264HDG-262XX | DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200 | Micron Technology Inc | VR4CU326428DTH vs MT8VDDT3264HDG-262XX |