Part Details for VP0106N6 by Supertex Inc
Overview of VP0106N6 by Supertex Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for VP0106N6
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 5 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,ARRAY,P-CHANNEL,60V V(BR)DSS,350MA I(D),DIP | 11 |
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$0.6750 / $0.8100 | Buy Now |
Part Details for VP0106N6
VP0106N6 CAD Models
VP0106N6 Part Data Attributes
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VP0106N6
Supertex Inc
Buy Now
Datasheet
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Compare Parts:
VP0106N6
Supertex Inc
Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SUPERTEX INC | |
| Part Package Code | DIP | |
| Package Description | IN-LINE, R-PDIP-T14 | |
| Pin Count | 14 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.35 A | |
| Drain-source On Resistance-Max | 8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 8 pF | |
| JESD-30 Code | R-PDIP-T14 | |
| JESD-609 Code | e0 | |
| Number of Elements | 4 | |
| Number of Terminals | 14 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 2 W | |
| Power Dissipation-Max (Abs) | 2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for VP0106N6
This table gives cross-reference parts and alternative options found for VP0106N6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VP0106N6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| ND2410L-1 | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 0.18A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA | VP0106N6 vs ND2410L-1 |
| 2N7007P018 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.065A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | VP0106N6 vs 2N7007P018 |
| 2N7002 | TDK Micronas GmbH | Check for Price | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | VP0106N6 vs 2N7002 |
| TP0606N6 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | VP0106N6 vs TP0606N6 |
| BSN205 | NXP Semiconductors | Check for Price | TRANSISTOR 300 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, SC-43, 3 PIN, FET General Purpose Small Signal | VP0106N6 vs BSN205 |
| 2N7008P014 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | VP0106N6 vs 2N7008P014 |
| 2N6659 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | VP0106N6 vs 2N6659 |
| ZVN4306ASTOA | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | VP0106N6 vs ZVN4306ASTOA |
| BST120-T | NXP Semiconductors | Check for Price | TRANSISTOR 300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | VP0106N6 vs BST120-T |
| 2N5639RLRA | onsemi | Check for Price | JFET Chopper Transistors, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL | VP0106N6 vs 2N5639RLRA |