Part Details for VLB100-12 by Advanced Semiconductor Inc
Overview of VLB100-12 by Advanced Semiconductor Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Part Details for VLB100-12
VLB100-12 CAD Models
VLB100-12 Part Data Attributes
|
|
VLB100-12
Advanced Semiconductor Inc
Buy Now
Datasheet
|
Compare Parts:
VLB100-12
Advanced Semiconductor Inc
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-4
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
| Package Description | FLANGE MOUNT, O-CRFM-F4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | EMITTER | |
| Collector Current-Max (IC) | 20 A | |
| Collector-Base Capacitance-Max | 400 pF | |
| Collector-Emitter Voltage-Max | 18 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 20 | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| JESD-30 Code | O-CRFM-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 270 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | FLAT | |
| Terminal Position | RADIAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |