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Memory DRAMs VG36641622AT-8

Memory
VG36641622AT-8
Vanguard International Semiconductor Corporation
Description: Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54

Overview of VG36641622AT-8 by Vanguard International Semiconductor Corporation

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Where used in Applications: Space Technology Medical Imaging Telecommunications

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Part Data Attributes for VG36641622AT-8 by Vanguard International Semiconductor Corporation
Parametric Data

VG36641622AT-8
Vanguard International Semiconductor Corporation
Buy Now
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
Part Package Code
TSOP
Package Description
TSOP2,
Pin Count
54
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
DUAL BANK PAGE BURST
Access Time-Max
6 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PDSO-G54
Length
22.22 mm
Memory Density
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
4MX16
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Width
10.16 mm
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  1. VG36641622AT-8
    Vanguard International Semiconductor Corporation
    Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54
    VS

Alternate Parts for VG36641622AT-8

This table gives cross-reference parts and alternative options found for VG36641622AT-8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VG36641622AT-8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HY57V651610TC-8 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc VG36641622AT-8 vs HY57V651610TC-8
UPD4565161G5-A10A-9JF Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 NEC Electronics Group VG36641622AT-8 vs UPD4565161G5-A10A-9JF
HY57V651610ALTC-10P Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc VG36641622AT-8 vs HY57V651610ALTC-10P
HY57V651610ALTC-10S Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc VG36641622AT-8 vs HY57V651610ALTC-10S
HY57V651611TC-8 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc VG36641622AT-8 vs HY57V651611TC-8
KM416S4021BT-G8 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Samsung Semiconductor VG36641622AT-8 vs KM416S4021BT-G8
HY57V651610LTC-8 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc VG36641622AT-8 vs HY57V651610LTC-8
HY57V641611TC-8 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc VG36641622AT-8 vs HY57V641611TC-8
HY57V651610ALTC-8 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc VG36641622AT-8 vs HY57V651610ALTC-8
UPD4565161G5-A10B-9JF Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 NEC Electronics Group VG36641622AT-8 vs UPD4565161G5-A10B-9JF
Part Number Description Manufacturer Compare
UPD4565161G5-A10BL-9JF Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 NEC Electronics Group VG36641622AT-8 vs UPD4565161G5-A10BL-9JF
HY57V641611TC-8 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc VG36641622AT-8 vs HY57V641611TC-8
KM416S4020BT-F8 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor VG36641622AT-8 vs KM416S4020BT-F8
UPD4565161G5-A10B-9JF Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 NEC Electronics Group VG36641622AT-8 vs UPD4565161G5-A10B-9JF
KM416S4020BT-G8 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor VG36641622AT-8 vs KM416S4020BT-G8
KM416S4020BT-FH Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor VG36641622AT-8 vs KM416S4020BT-FH
HY57V651611TC-8 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc VG36641622AT-8 vs HY57V651611TC-8
HY57V651610TC-8 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc VG36641622AT-8 vs HY57V651610TC-8
KM416S4021BT-G8 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Samsung Semiconductor VG36641622AT-8 vs KM416S4021BT-G8
HY57V651610ALTC-8 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc VG36641622AT-8 vs HY57V651610ALTC-8

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