There are no models available for this part yet.
Overview of VG3617161BT-6 by Vanguard International Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for VG3617161BT-6 by Vanguard International Semiconductor Corporation
Part Data Attributes for VG3617161BT-6 by Vanguard International Semiconductor Corporation
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
|
|
Part Package Code
|
TSOP2
|
|
Package Description
|
TSOP2, TSOP50,.46,32
|
|
Pin Count
|
50
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.02
|
|
Access Mode
|
DUAL BANK PAGE BURST
|
|
Access Time-Max
|
5.5 ns
|
|
Additional Feature
|
AUTO/SELF REFRESH
|
|
Clock Frequency-Max (fCLK)
|
166 MHz
|
|
I/O Type
|
COMMON
|
|
Interleaved Burst Length
|
1,2,4,8
|
|
JESD-30 Code
|
R-PDSO-G50
|
|
JESD-609 Code
|
e0
|
|
Length
|
20.95 mm
|
|
Memory Density
|
16777216 bit
|
|
Memory IC Type
|
SYNCHRONOUS DRAM
|
|
Memory Width
|
16
|
|
Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
50
|
|
Number of Words
|
1048576 words
|
|
Number of Words Code
|
1000000
|
|
Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
1MX16
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
TSOP2
|
|
Package Equivalence Code
|
TSOP50,.46,32
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE, THIN PROFILE
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
2048
|
|
Seated Height-Max
|
1.2 mm
|
|
Self Refresh
|
YES
|
|
Sequential Burst Length
|
1,2,4,8,FP
|
|
Standby Current-Max
|
0.0035 A
|
|
Supply Current-Max
|
0.185 mA
|
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
|
Supply Voltage-Min (Vsup)
|
3 V
|
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
GULL WING
|
|
Terminal Pitch
|
0.8 mm
|
|
Terminal Position
|
DUAL
|
|
Width
|
10.16 mm
|
Alternate Parts for VG3617161BT-6
This table gives cross-reference parts and alternative options found for VG3617161BT-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VG3617161BT-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IS45S16100F-7TLA1 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50 | Integrated Silicon Solution Inc | VG3617161BT-6 vs IS45S16100F-7TLA1 |
| K4S161622H-UC700 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-50 | Samsung Semiconductor | VG3617161BT-6 vs K4S161622H-UC700 |
| KM416S1120DT-F6 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | Samsung Semiconductor | VG3617161BT-6 vs KM416S1120DT-F6 |
| K4S161622D-TE60 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50 | Samsung Semiconductor | VG3617161BT-6 vs K4S161622D-TE60 |
| MB81F161622C-60FN | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Semiconductor Limited | VG3617161BT-6 vs MB81F161622C-60FN |
| IS45S16100E-6TLA2 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50 | Integrated Silicon Solution Inc | VG3617161BT-6 vs IS45S16100E-6TLA2 |
| K4S161622D-TL60 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | Samsung Semiconductor | VG3617161BT-6 vs K4S161622D-TL60 |
| IS42S16100C1-7TI-TR | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Integrated Silicon Solution Inc | VG3617161BT-6 vs IS42S16100C1-7TI-TR |
| K4S161622D-TP60 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | Samsung Semiconductor | VG3617161BT-6 vs K4S161622D-TP60 |
| V54C316162VCT-6 | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Mosel Vitelic Corporation | VG3617161BT-6 vs V54C316162VCT-6 |