Datasheets
V827564K24SBIY-C0 by: ProMOS Technologies Inc

DRAM, 64MX72, 0.7ns, CMOS, PDMA184

Part Details for V827564K24SBIY-C0 by ProMOS Technologies Inc

Overview of V827564K24SBIY-C0 by ProMOS Technologies Inc

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Applications Energy and Power Systems Renewable Energy Automotive

Part Details for V827564K24SBIY-C0

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V827564K24SBIY-C0 Part Data Attributes

V827564K24SBIY-C0 ProMOS Technologies Inc
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V827564K24SBIY-C0 ProMOS Technologies Inc DRAM, 64MX72, 0.7ns, CMOS, PDMA184
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer PROMOS TECHNOLOGIES INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Time-Max 0.7 ns
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
JESD-30 Code R-PDMA-N184
JESD-609 Code e4
Memory Density 4831838208 bit
Memory Width 72
Number of Terminals 184
Number of Words 67108864 words
Number of Words Code 64000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 64MX72
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code DIMM
Package Equivalence Code DIMM184
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 8192
Standby Current-Max 0.09 A
Supply Current-Max 3.15 mA
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL

Alternate Parts for V827564K24SBIY-C0

This table gives cross-reference parts and alternative options found for V827564K24SBIY-C0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V827564K24SBIY-C0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYMD564726A8J-J DDR DRAM Module, 64MX72, 0.7ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184 SK Hynix Inc V827564K24SBIY-C0 vs HYMD564726A8J-J
Part Number Description Manufacturer Compare
M381L6423AT0-LA2 DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor V827564K24SBIY-C0 vs M381L6423AT0-LA2
EBD51RC4AAFA-7A-E DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 Elpida Memory Inc V827564K24SBIY-C0 vs EBD51RC4AAFA-7A-E
M381L6423EUM-LC4 DDR DRAM Module, 64MX72, 0.65ns, CMOS, DIMM-184 Samsung Semiconductor V827564K24SBIY-C0 vs M381L6423EUM-LC4
M312L6420BT0-CB0 DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor V827564K24SBIY-C0 vs M312L6420BT0-CB0
MT9VDDT6472Y-265XX DDR DRAM Module, 64MX72, 0.75ns, CMOS, LEAD FREE, DIMM-184 Micron Technology Inc V827564K24SBIY-C0 vs MT9VDDT6472Y-265XX
M381L6423DTL-LB0 DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor V827564K24SBIY-C0 vs M381L6423DTL-LB0
HYMD264726A8-M DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 SK Hynix Inc V827564K24SBIY-C0 vs HYMD264726A8-M
MT18VDDT6472AIG-335XX DDR DRAM Module, 64MX72, 0.7ns, CMOS, DIMM-184 Micron Technology Inc V827564K24SBIY-C0 vs MT18VDDT6472AIG-335XX
MT18VDDT6472DY-26AXX DDR DRAM Module, 64MX72, 0.75ns, CMOS, LEAD FREE, DIMM-184 Micron Technology Inc V827564K24SBIY-C0 vs MT18VDDT6472DY-26AXX
W3EG7266S202D3S DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 Microsemi Corporation V827564K24SBIY-C0 vs W3EG7266S202D3S

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