Part Details for V58C2256804SHUS6E by ProMOS Technologies Inc
Overview of V58C2256804SHUS6E by ProMOS Technologies Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for V58C2256804SHUS6E
V58C2256804SHUS6E CAD Models
V58C2256804SHUS6E Part Data Attributes
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V58C2256804SHUS6E
ProMOS Technologies Inc
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Datasheet
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V58C2256804SHUS6E
ProMOS Technologies Inc
DDR DRAM, 32MX8, CMOS, PBGA60, M0-233, FBGA-60
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | PROMOS TECHNOLOGIES INC | |
Part Package Code | BGA | |
Package Description | TBGA, | |
Pin Count | 60 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-PBGA-B60 | |
Length | 13 mm | |
Memory Density | 268435456 bit | |
Memory IC Type | DDR DRAM | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 60 | |
Number of Words | 33554432 words | |
Number of Words Code | 32000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 125 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 32MX8 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TBGA | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | AUTOMOTIVE | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Width | 8 mm |
Alternate Parts for V58C2256804SHUS6E
This table gives cross-reference parts and alternative options found for V58C2256804SHUS6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V58C2256804SHUS6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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K4H560838J-LLB30 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | V58C2256804SHUS6E vs K4H560838J-LLB30 |
EDD2508AKTA-6B | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Elpida Memory Inc | V58C2256804SHUS6E vs EDD2508AKTA-6B |
K4H560838E-ZCB30 | DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | V58C2256804SHUS6E vs K4H560838E-ZCB30 |
NT5DS32M8BG-6K | DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, LEAD AND HALOGEN FREE, BGA-60 | Nanya Technology Corporation | V58C2256804SHUS6E vs NT5DS32M8BG-6K |
IS43R83200D-4TL | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSSOP2-66 | Integrated Silicon Solution Inc | V58C2256804SHUS6E vs IS43R83200D-4TL |
V58C2256804SALR-6 | DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, M0-233, DIE-STACKED, FBGA-60 | ProMOS Technologies Inc | V58C2256804SHUS6E vs V58C2256804SALR-6 |
MT46V32M8TG-6TLIT:G | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | V58C2256804SHUS6E vs MT46V32M8TG-6TLIT:G |
MT46V32M8TG-6TL:G | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | V58C2256804SHUS6E vs MT46V32M8TG-6TL:G |
V58C2256804SCLS6 | DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, MO-233, FBGA-60 | ProMOS Technologies Inc | V58C2256804SHUS6E vs V58C2256804SCLS6 |
HY5DU56822CF-J | DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, FBGA-60 | SK Hynix Inc | V58C2256804SHUS6E vs HY5DU56822CF-J |