Datasheets
V58C2256804SHUS6E by: ProMOS Technologies Inc

DDR DRAM, 32MX8, CMOS, PBGA60, M0-233, FBGA-60

Part Details for V58C2256804SHUS6E by ProMOS Technologies Inc

Overview of V58C2256804SHUS6E by ProMOS Technologies Inc

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Applications Consumer Electronics Computing and Data Storage

Part Details for V58C2256804SHUS6E

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V58C2256804SHUS6E Part Data Attributes

V58C2256804SHUS6E ProMOS Technologies Inc
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V58C2256804SHUS6E ProMOS Technologies Inc DDR DRAM, 32MX8, CMOS, PBGA60, M0-233, FBGA-60
Part Life Cycle Code Obsolete
Ihs Manufacturer PROMOS TECHNOLOGIES INC
Part Package Code BGA
Package Description TBGA,
Pin Count 60
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B60
Length 13 mm
Memory Density 268435456 bit
Memory IC Type DDR DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 125 °C
Operating Temperature-Min -40 °C
Organization 32MX8
Package Body Material PLASTIC/EPOXY
Package Code TBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade AUTOMOTIVE
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for V58C2256804SHUS6E

This table gives cross-reference parts and alternative options found for V58C2256804SHUS6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V58C2256804SHUS6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4H560838J-LLB30 DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor V58C2256804SHUS6E vs K4H560838J-LLB30
EDD2508AKTA-6B DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Elpida Memory Inc V58C2256804SHUS6E vs EDD2508AKTA-6B
K4H560838E-ZCB30 DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Samsung Semiconductor V58C2256804SHUS6E vs K4H560838E-ZCB30
NT5DS32M8BG-6K DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, LEAD AND HALOGEN FREE, BGA-60 Nanya Technology Corporation V58C2256804SHUS6E vs NT5DS32M8BG-6K
IS43R83200D-4TL DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSSOP2-66 Integrated Silicon Solution Inc V58C2256804SHUS6E vs IS43R83200D-4TL
V58C2256804SALR-6 DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, M0-233, DIE-STACKED, FBGA-60 ProMOS Technologies Inc V58C2256804SHUS6E vs V58C2256804SALR-6
MT46V32M8TG-6TLIT:G DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66 Micron Technology Inc V58C2256804SHUS6E vs MT46V32M8TG-6TLIT:G
MT46V32M8TG-6TL:G DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66 Micron Technology Inc V58C2256804SHUS6E vs MT46V32M8TG-6TL:G
V58C2256804SCLS6 DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, MO-233, FBGA-60 ProMOS Technologies Inc V58C2256804SHUS6E vs V58C2256804SCLS6
HY5DU56822CF-J DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, FBGA-60 SK Hynix Inc V58C2256804SHUS6E vs HY5DU56822CF-J

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