Part Details for V58C2128164SBLI6I by ProMOS Technologies Inc
Overview of V58C2128164SBLI6I by ProMOS Technologies Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for V58C2128164SBLI6I
V58C2128164SBLI6I CAD Models
V58C2128164SBLI6I Part Data Attributes
|
V58C2128164SBLI6I
ProMOS Technologies Inc
Buy Now
Datasheet
|
Compare Parts:
V58C2128164SBLI6I
ProMOS Technologies Inc
DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | PROMOS TECHNOLOGIES INC | |
Part Package Code | TSSOP2 | |
Package Description | TSSOP, | |
Pin Count | 66 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.7 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-PDSO-G66 | |
Length | 22.22 mm | |
Memory Density | 134217728 bit | |
Memory IC Type | DDR DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 66 | |
Number of Words | 8388608 words | |
Number of Words Code | 8000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 8MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSSOP | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.65 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 10.16 mm |
Alternate Parts for V58C2128164SBLI6I
This table gives cross-reference parts and alternative options found for V58C2128164SBLI6I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V58C2128164SBLI6I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
V58C2128164SCLI6 | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | V58C2128164SBLI6I vs V58C2128164SCLI6 |
K4H281638O-LCCC0 | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | V58C2128164SBLI6I vs K4H281638O-LCCC0 |
IS43R16800B-5T | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Integrated Silicon Solution Inc | V58C2128164SBLI6I vs IS43R16800B-5T |
N2DS12816FS-6K | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, GREEN, PLASTIC, TSOP2-66 | Nanya Technology Corporation | V58C2128164SBLI6I vs N2DS12816FS-6K |
W9412G6IH-6I | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 | Winbond Electronics Corp | V58C2128164SBLI6I vs W9412G6IH-6I |
HYB25D128160CT-6 | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Infineon Technologies AG | V58C2128164SBLI6I vs HYB25D128160CT-6 |
MT46V8M16TG-6TES:B | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | V58C2128164SBLI6I vs MT46V8M16TG-6TES:B |
V58C2128164SBT6I | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | V58C2128164SBLI6I vs V58C2128164SBT6I |
MT46V8M16TG-6T:B | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | V58C2128164SBLI6I vs MT46V8M16TG-6T:B |
V58C2128164SBE6I | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | V58C2128164SBLI6I vs V58C2128164SBE6I |