Datasheets
V58C2128164SBLI6I by: ProMOS Technologies Inc

DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66

Part Details for V58C2128164SBLI6I by ProMOS Technologies Inc

Overview of V58C2128164SBLI6I by ProMOS Technologies Inc

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Applications Industrial Automation Renewable Energy Robotics and Drones

Part Details for V58C2128164SBLI6I

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V58C2128164SBLI6I Part Data Attributes

V58C2128164SBLI6I ProMOS Technologies Inc
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V58C2128164SBLI6I ProMOS Technologies Inc DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer PROMOS TECHNOLOGIES INC
Part Package Code TSSOP2
Package Description TSSOP,
Pin Count 66
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G66
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type DDR DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 8MX16
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16 mm

Alternate Parts for V58C2128164SBLI6I

This table gives cross-reference parts and alternative options found for V58C2128164SBLI6I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V58C2128164SBLI6I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V58C2128164SCLI6 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc V58C2128164SBLI6I vs V58C2128164SCLI6
K4H281638O-LCCC0 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor V58C2128164SBLI6I vs K4H281638O-LCCC0
IS43R16800B-5T DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Integrated Silicon Solution Inc V58C2128164SBLI6I vs IS43R16800B-5T
N2DS12816FS-6K DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, GREEN, PLASTIC, TSOP2-66 Nanya Technology Corporation V58C2128164SBLI6I vs N2DS12816FS-6K
W9412G6IH-6I DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 Winbond Electronics Corp V58C2128164SBLI6I vs W9412G6IH-6I
HYB25D128160CT-6 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Infineon Technologies AG V58C2128164SBLI6I vs HYB25D128160CT-6
MT46V8M16TG-6TES:B DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc V58C2128164SBLI6I vs MT46V8M16TG-6TES:B
V58C2128164SBT6I DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc V58C2128164SBLI6I vs V58C2128164SBT6I
MT46V8M16TG-6T:B DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc V58C2128164SBLI6I vs MT46V8M16TG-6T:B
V58C2128164SBE6I DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc V58C2128164SBLI6I vs V58C2128164SBE6I
Part Number Description Manufacturer Compare
MT46V8M16P-6T:D DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc V58C2128164SBLI6I vs MT46V8M16P-6T:D
HY5DU281622FLTP-D43 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 SK Hynix Inc V58C2128164SBLI6I vs HY5DU281622FLTP-D43
K4D261638E-TC36 DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66, TSOP2-66 Samsung Semiconductor V58C2128164SBLI6I vs K4D261638E-TC36
V58C2128404-75 DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Mosel Vitelic Corporation V58C2128164SBLI6I vs V58C2128404-75
HYB25D128160CE-5 DDR DRAM, 8MX16, 0.5ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Infineon Technologies AG V58C2128164SBLI6I vs HYB25D128160CE-5
MT46V8M16D3TG-8 DDR DRAM, 8MX16, 0.8ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 Micron Technology Inc V58C2128164SBLI6I vs MT46V8M16D3TG-8
MT46V8M16P-6IT:A DDR DRAM, 8MX16, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc V58C2128164SBLI6I vs MT46V8M16P-6IT:A
MT46V8M16TG-6G DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 Micron Technology Inc V58C2128164SBLI6I vs MT46V8M16TG-6G
HY5DV281622DT-4 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc V58C2128164SBLI6I vs HY5DV281622DT-4
K4D261638F-TC330 Synchronous Graphics RAM, 8MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor V58C2128164SBLI6I vs K4D261638F-TC330

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