Part Details for V58C2128164SBF5 by ProMOS Technologies Inc
Overview of V58C2128164SBF5 by ProMOS Technologies Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Part Details for V58C2128164SBF5
V58C2128164SBF5 CAD Models
V58C2128164SBF5 Part Data Attributes
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V58C2128164SBF5
ProMOS Technologies Inc
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Datasheet
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V58C2128164SBF5
ProMOS Technologies Inc
DDR DRAM, 8MX16, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT, MO-233, FBGA-60
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | PROMOS TECHNOLOGIES INC | |
| Part Package Code | BGA | |
| Package Description | TBGA, BGA60,9X12,40/32 | |
| Pin Count | 60 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.65 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| Length | 13 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TBGA | |
| Package Equivalence Code | BGA60,9X12,40/32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.02 A | |
| Supply Current-Max | 0.355 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.5 V | |
| Supply Voltage-Nom (Vsup) | 2.6 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 8 mm |
Alternate Parts for V58C2128164SBF5
This table gives cross-reference parts and alternative options found for V58C2128164SBF5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V58C2128164SBF5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| V58C2128164SBJ5B | DDR DRAM, 8MX16, 0.65ns, CMOS, PBGA60, LEAD FREE, MO-233, FBGA-60 | ProMOS Technologies Inc | V58C2128164SBF5 vs V58C2128164SBJ5B |
| V58C2128164SBLF5B | DDR DRAM, 8MX16, 0.65ns, CMOS, PBGA60, LEAD FREE, MO-233, FBGA-60 | ProMOS Technologies Inc | V58C2128164SBF5 vs V58C2128164SBLF5B |
| V58C2128164SBS5B | DDR DRAM, 8MX16, 0.65ns, CMOS, PBGA60, MO-233, FBGA-60 | ProMOS Technologies Inc | V58C2128164SBF5 vs V58C2128164SBS5B |
| V58C2128164SBJ5 | DDR DRAM, 8MX16, 0.65ns, CMOS, PBGA60, GREEN, MO-233, FBGA-60 | ProMOS Technologies Inc | V58C2128164SBF5 vs V58C2128164SBJ5 |
| V58C2128164SBLS5B | DDR DRAM, 8MX16, 0.65ns, CMOS, PBGA60, MO-233, FBGA-60 | ProMOS Technologies Inc | V58C2128164SBF5 vs V58C2128164SBLS5B |