Memory
V54C3256164VDUC8PC
ProMOS Technologies Inc
Description: Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, MO-210, FBGA-54

Overview of V54C3256164VDUC8PC by ProMOS Technologies Inc

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Where used in Applications: Computing and Data Storage Financial Technology (Fintech)

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Part Data Attributes for V54C3256164VDUC8PC by ProMOS Technologies Inc

V54C3256164VDUC8PC
ProMOS Technologies Inc
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
PROMOS TECHNOLOGIES INC
Part Package Code
BGA
Package Description
TFBGA, BGA54,9X9,32
Pin Count
54
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
6 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
125 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PBGA-B54
Length
13 mm
Memory Density
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
16777216 words
Number of Words Code
16000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
16MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA54,9X9,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.001 A
Supply Current-Max
0.18 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
8 mm
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  1. V54C3256164VDUC8PC
    ProMOS Technologies Inc
    Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, MO-210, FBGA-54
    VS

Alternate Parts for V54C3256164VDUC8PC

This table gives cross-reference parts and alternative options found for V54C3256164VDUC8PC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V54C3256164VDUC8PC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
V54C3256164VDUG8PC Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, LEAD FREE, MO-210, FBGA-54 ProMOS Technologies Inc V54C3256164VDUC8PC vs V54C3256164VDUG8PC
V54C3256164VDLG8PC Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, LEAD FREE, MO-210, FBGA-54 ProMOS Technologies Inc V54C3256164VDUC8PC vs V54C3256164VDLG8PC
Part Number Description Manufacturer Compare
HY57V561620T-S Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc V54C3256164VDUC8PC vs HY57V561620T-S
V54C3256164VDE8PC Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-54 ProMOS Technologies Inc V54C3256164VDUC8PC vs V54C3256164VDE8PC
K4S561632C-TB1L Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor V54C3256164VDUC8PC vs K4S561632C-TB1L
K4S561632A-TL1L Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor V54C3256164VDUC8PC vs K4S561632A-TL1L
V54C3256164VAT-8 Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Mosel Vitelic Corporation V54C3256164VDUC8PC vs V54C3256164VAT-8
HYB39S256160CEL-8 Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG V54C3256164VDUC8PC vs HYB39S256160CEL-8
HYB39S256160DT-8 Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Infineon Technologies AG V54C3256164VDUC8PC vs HYB39S256160DT-8
HYB39S256160DF-8 Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 12 X 8 MM, PLASTIC, TFBGA-54 Infineon Technologies AG V54C3256164VDUC8PC vs HYB39S256160DF-8
HY57V561620BST-S Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc V54C3256164VDUC8PC vs HY57V561620BST-S
HY5V56DLF-S Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 13.50 X 8 MM, 0.80 MM PITCH, FBGA-54 SK Hynix Inc V54C3256164VDUC8PC vs HY5V56DLF-S

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