Part Details for UZXMN10A11GTC by Diodes Incorporated
Overview of UZXMN10A11GTC by Diodes Incorporated
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
Part Details for UZXMN10A11GTC
UZXMN10A11GTC CAD Models
UZXMN10A11GTC Part Data Attributes
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UZXMN10A11GTC
Diodes Incorporated
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Datasheet
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UZXMN10A11GTC
Diodes Incorporated
Small Signal Field-Effect Transistor, 1.9A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1.9 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for UZXMN10A11GTC
This table gives cross-reference parts and alternative options found for UZXMN10A11GTC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UZXMN10A11GTC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| UZXMN10A11GTA | Small Signal Field-Effect Transistor, 1.9A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Zetex / Diodes Inc | UZXMN10A11GTC vs UZXMN10A11GTA |
| UZXMN10A11GTA | Small Signal Field-Effect Transistor, 1.9A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Diodes Incorporated | UZXMN10A11GTC vs UZXMN10A11GTA |