Part Details for UZVN4306GV by Diodes Incorporated
Overview of UZVN4306GV by Diodes Incorporated
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for UZVN4306GV
UZVN4306GV CAD Models
UZVN4306GV Part Data Attributes
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UZVN4306GV
Diodes Incorporated
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Datasheet
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UZVN4306GV
Diodes Incorporated
Power Field-Effect Transistor, 2.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 2.1 A | |
| Drain-source On Resistance-Max | 0.33 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for UZVN4306GV
This table gives cross-reference parts and alternative options found for UZVN4306GV. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UZVN4306GV, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| ZVN4306GV | Power Field-Effect Transistor, 2.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Zetex / Diodes Inc | UZVN4306GV vs ZVN4306GV |
| ZVN4306GV | Power Field-Effect Transistor, 2.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Diodes Incorporated | UZVN4306GV vs ZVN4306GV |
| ZVN4306GVTA | Power Field-Effect Transistor, 2.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Zetex / Diodes Inc | UZVN4306GV vs ZVN4306GVTA |
| UZVN4306GV | Power Field-Effect Transistor, 2.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Zetex / Diodes Inc | UZVN4306GV vs UZVN4306GV |
| ZVN4306GVTA | Power Field-Effect Transistor, 2.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | UZVN4306GV vs ZVN4306GVTA |