Part Details for UPD44324095F5-E50Y-EQ2 by NEC Electronics Group
Overview of UPD44324095F5-E50Y-EQ2 by NEC Electronics Group
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for UPD44324095F5-E50Y-EQ2
UPD44324095F5-E50Y-EQ2 CAD Models
UPD44324095F5-E50Y-EQ2 Part Data Attributes:
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UPD44324095F5-E50Y-EQ2
NEC Electronics Group
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Datasheet
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UPD44324095F5-E50Y-EQ2
NEC Electronics Group
DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEC ELECTRONICS CORP | |
| Part Package Code | BGA | |
| Package Description | LBGA, | |
| Pin Count | 165 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e0 | |
| Length | 15 mm | |
| Memory Density | 37748736 bit | |
| Memory IC Type | DDR SRAM | |
| Memory Width | 9 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 4MX9 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.51 mm | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Width | 13 mm |
Alternate Parts for UPD44324095F5-E50Y-EQ2
This table gives cross-reference parts and alternative options found for UPD44324095F5-E50Y-EQ2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPD44324095F5-E50Y-EQ2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| UPD44324095F5-E50Y-EQ2-A | 4MX9 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165 | Renesas Electronics Corporation | UPD44324095F5-E50Y-EQ2 vs UPD44324095F5-E50Y-EQ2-A |
| GS8342S09AGE-200I | DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 | GSI Technology | UPD44324095F5-E50Y-EQ2 vs GS8342S09AGE-200I |
| CY7C1429AV18-200BZXC | DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | UPD44324095F5-E50Y-EQ2 vs CY7C1429AV18-200BZXC |
| GS8342S09AE-200I | DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 | GSI Technology | UPD44324095F5-E50Y-EQ2 vs GS8342S09AE-200I |
| UPD44324095F5-E50-EQ2-A | 4MX9 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165 | Renesas Electronics Corporation | UPD44324095F5-E50Y-EQ2 vs UPD44324095F5-E50-EQ2-A |
| GS8342S09AE-200IT | DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 | GSI Technology | UPD44324095F5-E50Y-EQ2 vs GS8342S09AE-200IT |
| CY7C1429AV18-200BZXI | DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | UPD44324095F5-E50Y-EQ2 vs CY7C1429AV18-200BZXI |
| CY7C1429BV18-200BZXC | DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | UPD44324095F5-E50Y-EQ2 vs CY7C1429BV18-200BZXC |
| GS8342S09AGE-200IT | DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 | GSI Technology | UPD44324095F5-E50Y-EQ2 vs GS8342S09AGE-200IT |
| GS8342S09AE-200 | DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 | GSI Technology | UPD44324095F5-E50Y-EQ2 vs GS8342S09AE-200 |