UPA814T-KB-A
Description: RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC, SO-6

Overview of UPA814T-KB-A by NEC Compound Semiconductor Devices Ltd

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  • Part Data Attributes ( Available )
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Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Part Data Attributes for UPA814T-KB-A by NEC Compound Semiconductor Devices Ltd

UPA814T-KB-A
NEC Compound Semiconductor Devices Ltd
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Package Description
PLASTIC, SO-6
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
LOW NOISE
Collector Current-Max (IC)
0.1 A
Collector-Base Capacitance-Max
0.85 pF
Collector-Emitter Voltage-Max
6 V
Configuration
SEPARATE, 2 ELEMENTS
Highest Frequency Band
L BAND
JESD-30 Code
R-PDSO-G6
JESD-609 Code
e6
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
NPN
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN BISMUTH
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
9000 MHz
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  1. UPA814T-KB-A
    NEC Compound Semiconductor Devices Ltd
    RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC, SO-6
    VS

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