Datasheets
UPA812T-T1FB by:

RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6

Part Details for UPA812T-T1FB by NEC Compound Semiconductor Devices Ltd

Overview of UPA812T-T1FB by NEC Compound Semiconductor Devices Ltd

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Applications Consumer Electronics Education and Research Automotive

Part Details for UPA812T-T1FB

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UPA812T-T1FB Part Data Attributes

UPA812T-T1FB NEC Compound Semiconductor Devices Ltd
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UPA812T-T1FB NEC Compound Semiconductor Devices Ltd RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Package Description PLASTIC, SO-6
Reach Compliance Code compliant
ECCN Code EAR99
kg CO2e/kg 8.4
Average Weight (mg) 369.75
CO2e (mg) 3105.9
Category CO2 Kg 8.4
Candidate List Date 2010-01-13
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.065 A
Collector-Base Capacitance-Max 0.9 pF
Collector-Emitter Voltage-Max 10 V
Configuration SEPARATE, 2 ELEMENTS
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G6
JESD-609 Code e0
Number of Elements 2
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 7000 MHz

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