Datasheets
UPA812T-T1FB-A by:

RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6

Part Details for UPA812T-T1FB-A by NEC Compound Semiconductor Devices Ltd

Overview of UPA812T-T1FB-A by NEC Compound Semiconductor Devices Ltd

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Applications Consumer Electronics Education and Research Automotive

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Part Details for UPA812T-T1FB-A

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UPA812T-T1FB-A Part Data Attributes

UPA812T-T1FB-A NEC Compound Semiconductor Devices Ltd
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UPA812T-T1FB-A NEC Compound Semiconductor Devices Ltd RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Package Description PLASTIC, SO-6
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.065 A
Collector-Base Capacitance-Max 0.9 pF
Collector-Emitter Voltage-Max 10 V
Configuration SEPARATE, 2 ELEMENTS
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G6
JESD-609 Code e6
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 7000 MHz

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