Part Details for UPA1919TE-T1-A by Renesas Electronics Corporation
Overview of UPA1919TE-T1-A by Renesas Electronics Corporation
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- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Industrial Automation
Electronic Manufacturing
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
UPA1919TE-T1-AT | Renesas Electronics Corporation | Power MOSFETs for Automotive | |
UPA1919TE-T1-A | Renesas Electronics Corporation | Power MOSFETs for Automotive | |
UPA1919TE(0)-T1-A | Renesas Electronics Corporation | Power MOSFETs for Automotive |
Part Details for UPA1919TE-T1-A
UPA1919TE-T1-A CAD Models
UPA1919TE-T1-A Part Data Attributes
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UPA1919TE-T1-A
Renesas Electronics Corporation
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Datasheet
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UPA1919TE-T1-A
Renesas Electronics Corporation
Power MOSFETs for Automotive, TMM, /Tape
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | TMM | |
Package Description | THIN, MINIMOLD, SC-95, 6 PIN | |
Pin Count | 6 | |
Manufacturer Package Code | PTSP0006ZA-A6 | |
Reach Compliance Code | compliant | |
ECCN Code | 5A002 | |
Samacsys Manufacturer | Renesas Electronics | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.084 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e6 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Surface Mount | YES | |
Terminal Finish | TIN BISMUTH | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |