Part Details for TXB-1N5147A by Lockheed Martin Microwave
Overview of TXB-1N5147A by Lockheed Martin Microwave
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Part Details for TXB-1N5147A
TXB-1N5147A CAD Models
TXB-1N5147A Part Data Attributes
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TXB-1N5147A
Lockheed Martin Microwave
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Datasheet
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TXB-1N5147A
Lockheed Martin Microwave
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 60V, Silicon, Abrupt, DO-7
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | LOCKHEED MARTIN MICROWAVE | |
| Package Description | O-LALF-W2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Additional Feature | HIGH RELIABILITY | |
| Breakdown Voltage-Min | 60 V | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Cap Tolerance | 5% | |
| Diode Capacitance Ratio-Min | 3.2 | |
| Diode Capacitance-Nom | 39 pF | |
| Diode Element Material | SILICON | |
| Diode Type | VARIABLE CAPACITANCE DIODE | |
| Frequency Band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | |
| JEDEC-95 Code | DO-7 | |
| JESD-30 Code | O-LALF-W2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Power Dissipation-Max | 0.4 W | |
| Qualification Status | Not Qualified | |
| Quality Factor-Min | 200 | |
| Reverse Current-Max | 0.02 µA | |
| Reverse Test Voltage | 55 V | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL | |
| Variable Capacitance Diode Classification | ABRUPT |