Part Details for TX-1N5461A by Lockheed Martin Microwave
Overview of TX-1N5461A by Lockheed Martin Microwave
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Applications
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Available Datasheets
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Part Details for TX-1N5461A
TX-1N5461A CAD Models
TX-1N5461A Part Data Attributes
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TX-1N5461A
Lockheed Martin Microwave
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Datasheet
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TX-1N5461A
Lockheed Martin Microwave
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | LOCKHEED MARTIN MICROWAVE | |
Package Description | O-LALF-W2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Additional Feature | HIGH RELIABILITY | |
Breakdown Voltage-Min | 30 V | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Cap Tolerance | 10% | |
Diode Capacitance Ratio-Min | 2.7 | |
Diode Capacitance-Nom | 6.8 pF | |
Diode Element Material | SILICON | |
Diode Type | VARIABLE CAPACITANCE DIODE | |
Frequency Band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | |
JEDEC-95 Code | DO-7 | |
JESD-30 Code | O-LALF-W2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Power Dissipation-Max | 0.4 W | |
Qualification Status | Not Qualified | |
Quality Factor-Min | 600 | |
Reverse Current-Max | 0.02 µA | |
Reverse Test Voltage | 25 V | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | AXIAL | |
Variable Capacitance Diode Classification | ABRUPT |