TX-1N5461A
Description: Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7

Overview of TX-1N5461A by Lockheed Martin Microwave

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Space Technology Aerospace and Defense Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE

CAD Models for TX-1N5461A by Lockheed Martin Microwave
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Part Data Attributes for TX-1N5461A by Lockheed Martin Microwave

TX-1N5461A
Lockheed Martin Microwave
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
LOCKHEED MARTIN MICROWAVE
Package Description
O-LALF-W2
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.80
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
30 V
Case Connection
ISOLATED
Configuration
SINGLE
Diode Cap Tolerance
10%
Diode Capacitance Ratio-Min
2.7
Diode Capacitance-Nom
6.8 pF
Diode Element Material
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 Code
DO-7
JESD-30 Code
O-LALF-W2
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
175 °C
Package Body Material
GLASS
Package Shape
ROUND
Package Style
LONG FORM
Power Dissipation-Max
0.4 W
Qualification Status
Not Qualified
Quality Factor-Min
600
Reverse Current-Max
0.02 µA
Reverse Test Voltage
25 V
Surface Mount
NO
Terminal Form
WIRE
Terminal Position
AXIAL
Variable Capacitance Diode Classification
ABRUPT
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  1. TX-1N5461A
    Lockheed Martin Microwave
    Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7
    VS

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