Part Details for TSM4N60CPRO by Taiwan Semiconductor
Overview of TSM4N60CPRO by Taiwan Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for TSM4N60CPRO
TSM4N60CPRO CAD Models
TSM4N60CPRO Part Data Attributes
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TSM4N60CPRO
Taiwan Semiconductor
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Datasheet
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TSM4N60CPRO
Taiwan Semiconductor
Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 2.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TSM4N60CPRO
This table gives cross-reference parts and alternative options found for TSM4N60CPRO. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TSM4N60CPRO, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TSM4NB60CHC5G | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Taiwan Semiconductor | TSM4N60CPRO vs TSM4NB60CHC5G |
| SMK0460IS | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | Kodenshi Corporation | TSM4N60CPRO vs SMK0460IS |
| AP04N60H-HF | TRANSISTOR POWER, FET, FET General Purpose Power | Advanced Power Electronics Corp | TSM4N60CPRO vs AP04N60H-HF |
| 4N60G-T2Q-T | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | TSM4N60CPRO vs 4N60G-T2Q-T |
| 4N60L-TM3-T | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | TSM4N60CPRO vs 4N60L-TM3-T |
| PJD4NA60_L2_00001 | Power Field-Effect Transistor, 4A I(D), 600V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | PanJit Semiconductor | TSM4N60CPRO vs PJD4NA60_L2_00001 |
| 4N60G-TN3-T | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Unisonic Technologies Co Ltd | TSM4N60CPRO vs 4N60G-TN3-T |
| 4N60G-TQ3-R | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | TSM4N60CPRO vs 4N60G-TQ3-R |
| 4N60G-TQ3-T | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | TSM4N60CPRO vs 4N60G-TQ3-T |
| 4N60G-TN3-R | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | TSM4N60CPRO vs 4N60G-TN3-R |