Part Details for TPM2323-30 by Toshiba America Electronic Components
Overview of TPM2323-30 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for TPM2323-30
TPM2323-30 CAD Models
TPM2323-30 Part Data Attributes
|
TPM2323-30
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
TPM2323-30
Toshiba America Electronic Components
TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | FLANGE MOUNT, R-CDFM-F2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 15 V | |
Drain Current-Max (ID) | 26 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | S BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for TPM2323-30
This table gives cross-reference parts and alternative options found for TPM2323-30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPM2323-30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FLM2527L-20 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | TPM2323-30 vs FLM2527L-20 |
MGFS45V2527 | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN | Mitsubishi Electric | TPM2323-30 vs MGFS45V2527 |
FLM2527L-20 | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Limited | TPM2323-30 vs FLM2527L-20 |
NES2527B-30 | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, T-79, 2 PIN | NEC Electronics Group | TPM2323-30 vs NES2527B-30 |
TPM2323-60 | TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power | Toshiba America Electronic Components | TPM2323-30 vs TPM2323-60 |
MGFS45V2527-51 | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN | Mitsubishi Electric | TPM2323-30 vs MGFS45V2527-51 |