Datasheets
TP2635N3-G by:

180mA, 350V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

Part Details for TP2635N3-G by Microchip Technology Inc

Overview of TP2635N3-G by Microchip Technology Inc

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Applications Consumer Electronics Industrial Automation Automotive

Price & Stock for TP2635N3-G

Part # Distributor Description Stock Price Buy
DISTI # 53Y4283
Newark Mosfet, P-Channel Enhancement-Mode, -350V, 15 Ohm 3 To-92 Bag Rohs Compliant: Yes |Microchip TP2635N3-G Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $1.5600
$1.5600 Buy Now
DISTI # TP2635N3-G-ND
DigiKey MOSFET P-CH 350V 180MA TO92-3 Min Qty: 1 Lead time: 4 Weeks Container: Bag 346
In Stock
  • 1 $2.0000
  • 25 $1.6600
  • 100 $1.5100
$1.5100 / $2.0000 Buy Now
DISTI # TP2635N3-G
Avnet Americas Trans MOSFET P-CH 350V 0.18A 3-Pin TO-92 Bag - Bag (Alt: TP2635N3-G) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 4 Weeks, 0 Days Container: Bag 0
  • 1 $2.0000
  • 25 $1.6600
  • 100 $1.5100
$1.5100 / $2.0000 Buy Now
DISTI # 689-TP2635N3-G
Mouser Electronics MOSFET 350V 15Ohm RoHS: Compliant 887
  • 1 $2.0000
  • 25 $1.6600
  • 100 $1.5100
$1.5100 / $2.0000 Buy Now
DISTI # TP2635N3-G
Microchip Technology Inc MOSFET, P-CHANNEL ENHANCEMENT-MODE, -350V, 15 Ohm, Projected EOL: 2034-09-16 RoHS: Compliant pbFree: Yes 20930
  • 1 $2.0000
  • 25 $1.6600
  • 100 $1.5100
  • 1,000 $1.2600
  • 5,000 $1.1500
$1.1500 / $2.0000 Buy Now
DISTI # 70483921
RS MOSFET, P-CHANNEL ENHANCEMENT-MODE, -350V, 15 Ohm3 TO-92 BAG | Microchip Technology Inc. TP2635N3-G RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk 0
  • 1,000 $1.9400
  • 10,000 $1.8400
  • 50,000 $1.7400
  • 100,000 $1.6500
$1.6500 / $1.9400 RFQ
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 0
  • 1,000 $1.0200
$1.0200 Buy Now
Onlinecomponents.com MOSFET Transistor - P Channel - 180 mA - 350 V - 15 ohm - TO-92-3. RoHS: Compliant 20000 Factory Stock
  • 25 $1.1530
  • 250 $1.0550
  • 500 $1.0390
  • 1,000 $0.9850
  • 3,000 $0.9470
  • 5,000 $0.9330
  • 8,000 $0.9190
  • 10,000 $0.9050
$0.9050 / $1.1530 Buy Now
Ameya Holding Limited Transistor: P-MOSFET, unipolar, -350V, -0.7A, 1W, TO92 20930
RFQ
NAC MOSFET, P-CHANNEL ENHANCEMENT-MODE, -350V, 15 Ohm - Package: 3 TO-92 BAG RoHS: Compliant Min Qty: 1 Package Multiple: 1000 Container: Bag 16000
  • 1 $1.1700
  • 100 $1.0600
  • 500 $0.9700
  • 1,000 $0.9500
$0.9500 / $1.1700 Buy Now
DISTI # TP2635N3-G
Avnet Silica Trans MOSFET P-CH 350V 0.18A 3-Pin TO-92 Bag (Alt: TP2635N3-G) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 6 Weeks, 0 Days Silica - 0
Buy Now
Master Electronics MOSFET Transistor - P Channel - 180 mA - 350 V - 15 ohm - TO-92-3. RoHS: Compliant 20000 Factory Stock
  • 25 $1.1530
  • 250 $1.0550
  • 500 $1.0390
  • 1,000 $0.9850
  • 3,000 $0.9470
  • 5,000 $0.9330
  • 8,000 $0.9190
  • 10,000 $0.9050
$0.9050 / $1.1530 Buy Now

Part Details for TP2635N3-G

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TP2635N3-G Part Data Attributes

TP2635N3-G Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
TP2635N3-G Microchip Technology Inc 180mA, 350V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description GREEN PACKAGE-3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 4 Weeks
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 350 V
Drain Current-Max (ID) 0.18 A
Drain-source On Resistance-Max 15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 12 pF
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

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