Datasheets
TN0110N3-GP003 by:

SMALL SIGNAL, FET

Part Details for TN0110N3-GP003 by Microchip Technology Inc

Overview of TN0110N3-GP003 by Microchip Technology Inc

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Part Details for TN0110N3-GP003

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TN0110N3-GP003 Part Data Attributes

TN0110N3-GP003 Microchip Technology Inc
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TN0110N3-GP003 Microchip Technology Inc SMALL SIGNAL, FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.35 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8 pF
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 1 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TN0110N3-GP003

This table gives cross-reference parts and alternative options found for TN0110N3-GP003. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TN0110N3-GP003, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
TN0110N3-G 350mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 Microchip Technology Inc TN0110N3-GP003 vs TN0110N3-G
Part Number Description Manufacturer Compare
ZVNL110A Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Diodes Incorporated TN0110N3-GP003 vs ZVNL110A
TN0110N3-G 350mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 Microchip Technology Inc TN0110N3-GP003 vs TN0110N3-G
ZVNL110ASTOA Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Diodes Incorporated TN0110N3-GP003 vs ZVNL110ASTOA
ZVNL110ASTOB Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Diodes Incorporated TN0110N3-GP003 vs ZVNL110ASTOB
ZVNL110ASTZ Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Diodes Incorporated TN0110N3-GP003 vs ZVNL110ASTZ

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