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Part Details for TK72E12N1 by Toshiba America Electronic Components
Overview of TK72E12N1 by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for TK72E12N1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
TK72E12N1
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TME | Transistor: N-MOSFET, unipolar, 120V, 72A, 255W, TO220AB Min Qty: 1 | 337 |
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$1.6100 / $2.4200 | Buy Now |
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Win Source Electronics | Trans MOSFET N-CH Si 120V 179A 3-Pin(3+Tab) TO-220 Magazine / MOSFET N CH 120V 72A TO-220 | 46420 |
|
$1.8840 / $2.8260 | Buy Now |
Part Details for TK72E12N1
TK72E12N1 CAD Models
TK72E12N1 Part Data Attributes
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TK72E12N1
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK72E12N1
Toshiba America Electronic Components
TRANSISTOR POWER, FET, FET General Purpose Power
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 256 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 120 V | |
| Drain Current-Max (ID) | 72 A | |
| Drain-source On Resistance-Max | 0.0044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 255 W | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TK72E12N1
This table gives cross-reference parts and alternative options found for TK72E12N1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK72E12N1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TK72E12N1,S1X(S | Power Field-Effect Transistor, 72A I(D), 120V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Toshiba America Electronic Components | TK72E12N1 vs TK72E12N1,S1X(S |