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Part Details for TK20G60W by Toshiba America Electronic Components
Overview of TK20G60W by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for TK20G60W
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TK20G60W,RVQ
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Avnet Americas | Trans MOSFET N-CH 600V 20A 3-Pin D2PAK - Tape and Reel (Alt: TK20G60W,RVQ) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$1.2569 / $1.4244 | Buy Now |
Part Details for TK20G60W
TK20G60W CAD Models
TK20G60W Part Data Attributes
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TK20G60W
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK20G60W
Toshiba America Electronic Components
TRANSISTOR POWER, FET, FET General Purpose Power
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.155 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 7 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 165 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TK20G60W
This table gives cross-reference parts and alternative options found for TK20G60W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK20G60W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| TK20V60W5 | Toshiba America Electronic Components | Check for Price | Nch 500V<VDSS≤700V, Power MOSFET | TK20G60W vs TK20V60W5 |
| FDA50N50_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 48A I(D), 500V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3PN, 3 PIN | TK20G60W vs FDA50N50_NL |
| FDA50N50 | onsemi | Check for Price | Power MOSFET, N-Channel, UniFETTM, 500V, 48A, 105mΩ, TO-3P, TO-3P-3L, 450-TUBE | TK20G60W vs FDA50N50 |
| IRF9622 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 3A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TK20G60W vs IRF9622 |
| MTH35N06 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 35A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | TK20G60W vs MTH35N06 |
| SML50B26FR3 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | TK20G60W vs SML50B26FR3 |
| TK20N60W5 | Toshiba America Electronic Components | Check for Price | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V | TK20G60W vs TK20N60W5 |
| SMP50N05 | Texas Instruments | Check for Price | 50A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TK20G60W vs SMP50N05 |
| SPP80N06S2-09 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | TK20G60W vs SPP80N06S2-09 |
| STW45NM50 | STMicroelectronics | $8.7524 | N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package | TK20G60W vs STW45NM50 |