Part Details for TIM6472-25UL by Toshiba America Electronic Components
Overview of TIM6472-25UL by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
57102-G08-25ULF | Amphenol Communications Solutions | Minitek®, Board/Wire to Board Connectors, Unshrouded Headers - Through Hole - Double row - 50 Positions - 2mm (0.079inch) - Vertical | |
57202-G51-25ULF | Amphenol Communications Solutions | Unshrouded Vertical Header, Surface Mount, Double Row, 50 Position ,2.00mm (0.079in) Pitch | |
10075024-G01-25ULF | Amphenol Communications Solutions | Minitek®, Board/Wire to Board Connectors, Unshrouded Headers - Through Hole - Double row - 50 Positions - 2mm (0.079inch) - Vertical |
Part Details for TIM6472-25UL
TIM6472-25UL CAD Models
TIM6472-25UL Part Data Attributes
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TIM6472-25UL
Toshiba America Electronic Components
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Datasheet
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TIM6472-25UL
Toshiba America Electronic Components
TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | HERMETIC SEALED, 2-16G1B, 3 PIN | |
Pin Count | 2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 15 V | |
Drain Current-Max (ID) | 20 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | C BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 100 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |