Datasheets
TD2147H1 by: Intel Corporation

Standard SRAM, 4KX1, 35ns, MOS, CDIP18

Part Details for TD2147H1 by Intel Corporation

Overview of TD2147H1 by Intel Corporation

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Part Details for TD2147H1

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TD2147H1 Part Data Attributes

TD2147H1 Intel Corporation
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TD2147H1 Intel Corporation Standard SRAM, 4KX1, 35ns, MOS, CDIP18
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEL CORP
Package Description DIP, DIP18,.3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.41
Access Time-Max 35 ns
I/O Type SEPARATE
JESD-30 Code R-XDIP-T18
JESD-609 Code e0
Memory Density 4096 bit
Memory IC Type STANDARD SRAM
Memory Width 1
Number of Terminals 18
Number of Words 4096 words
Number of Words Code 4000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 4KX1
Output Characteristics 3-STATE
Package Body Material CERAMIC
Package Code DIP
Package Equivalence Code DIP18,.3
Package Shape RECTANGULAR
Package Style IN-LINE
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Standby Voltage-Min 4.5 V
Supply Current-Max 0.18 mA
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology MOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL

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