Datasheets
TC59S6432CFT-54 by: Toshiba America Electronic Components

IC 2M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86, 0.400 ICNH, 0.50 MM PITCH, PLASTIC, TSOP2-86, Dynamic RAM

Part Details for TC59S6432CFT-54 by Toshiba America Electronic Components

Overview of TC59S6432CFT-54 by Toshiba America Electronic Components

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Part Details for TC59S6432CFT-54

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TC59S6432CFT-54 Part Data Attributes

TC59S6432CFT-54 Toshiba America Electronic Components
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TC59S6432CFT-54 Toshiba America Electronic Components IC 2M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86, 0.400 ICNH, 0.50 MM PITCH, PLASTIC, TSOP2-86, Dynamic RAM
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Part Package Code TSOP2
Package Description TSOP2, TSSOP86,.46,20
Pin Count 86
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 185 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G86
JESD-609 Code e0
Length 22.22 mm
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 86
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP86,.46,20
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 A
Supply Current-Max 0.16 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Pitch 0.5 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for TC59S6432CFT-54

This table gives cross-reference parts and alternative options found for TC59S6432CFT-54. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TC59S6432CFT-54, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS45S32200L-7TLA2 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOPII-86 Integrated Silicon Solution Inc TC59S6432CFT-54 vs IS45S32200L-7TLA2
IS42S32200L-7TLI Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOPII-86 Integrated Silicon Solution Inc TC59S6432CFT-54 vs IS42S32200L-7TLI
EDS6432AFTA-75TI-E Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, ROHS COMPLIANT, PLASTIC, TSOP2-86 Elpida Memory Inc TC59S6432CFT-54 vs EDS6432AFTA-75TI-E
TC59S6432CFT-70 IC 2M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86, 0.400 ICNH, 0.50 MM PITCH, PLASTIC, TSOP2-86, Dynamic RAM Toshiba America Electronic Components TC59S6432CFT-54 vs TC59S6432CFT-70
HY57V563220ALT-H Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, 0.80 MM PITCH, TSOP2-86 SK Hynix Inc TC59S6432CFT-54 vs HY57V563220ALT-H
IS45S32200L-75ETLA1 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOPII-86 Integrated Silicon Solution Inc TC59S6432CFT-54 vs IS45S32200L-75ETLA1
TC59S6432CFT-60 IC 2M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86, 0.400 ICNH, 0.50 MM PITCH, PLASTIC, TSOP2-86, Dynamic RAM Toshiba America Electronic Components TC59S6432CFT-54 vs TC59S6432CFT-60
TC59S6432DFTL-60 IC 2M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86, 0.400 ICNH, 0.50 MM PITCH, PLASTIC, TSOP2-86, Dynamic RAM Toshiba America Electronic Components TC59S6432CFT-54 vs TC59S6432DFTL-60
HY57V563220AT-H Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, 0.80 MM PITCH, TSOP2-86 SK Hynix Inc TC59S6432CFT-54 vs HY57V563220AT-H
IS45S32200L-7TLA1 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOPII-86 Integrated Silicon Solution Inc TC59S6432CFT-54 vs IS45S32200L-7TLA1
Part Number Description Manufacturer Compare
TC59S6432DFTLI-70 IC 2M X 32 SYNCHRONOUS DRAM, 4.4 ns, PDSO86, 0.400 ICNH, 0.50 MM PITCH, PLASTIC, TSOP2-86, Dynamic RAM Toshiba America Electronic Components TC59S6432CFT-54 vs TC59S6432DFTLI-70
M2V53S50ETP-7L Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Elpida Memory Inc TC59S6432CFT-54 vs M2V53S50ETP-7L
AS4SD2M32DGX-75XT Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, PLASTIC, TSOP2-86 Micross Components TC59S6432CFT-54 vs AS4SD2M32DGX-75XT
VG36643211BT-10 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86 Vanguard International Semiconductor Corporation TC59S6432CFT-54 vs VG36643211BT-10
EDS6432AFTA-75TI-E Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, ROHS COMPLIANT, PLASTIC, TSOP2-86 Elpida Memory Inc TC59S6432CFT-54 vs EDS6432AFTA-75TI-E
HY57V643220CLT-S Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, TSOP2-86 SK Hynix Inc TC59S6432CFT-54 vs HY57V643220CLT-S
KM432S2020BT-G10 Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor TC59S6432CFT-54 vs KM432S2020BT-G10
TC59S6432DFTL-60 IC 2M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86, 0.400 ICNH, 0.50 MM PITCH, PLASTIC, TSOP2-86, Dynamic RAM Toshiba America Electronic Components TC59S6432CFT-54 vs TC59S6432DFTL-60
HY57V563220ALT-H Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, 0.80 MM PITCH, TSOP2-86 SK Hynix Inc TC59S6432CFT-54 vs HY57V563220ALT-H
MB811643242A-84FN Synchronous DRAM, 2MX32, 56ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 FUJITSU Semiconductor Limited TC59S6432CFT-54 vs MB811643242A-84FN

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