Part Details for T10W80HDT by Shindengen Electronic Manufacturing Co Ltd
Overview of T10W80HDT by Shindengen Electronic Manufacturing Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for T10W80HDT
T10W80HDT CAD Models
T10W80HDT Part Data Attributes
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T10W80HDT
Shindengen Electronic Manufacturing Co Ltd
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Datasheet
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T10W80HDT
Shindengen Electronic Manufacturing Co Ltd
Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MTO-3P, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | |
Part Package Code | TO-3P | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Collector Current-Max (IC) | 10 A | |
Collector-Emitter Voltage-Max | 800 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 7 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 240 | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 100 W | |
Power Dissipation-Max (Abs) | 100 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 7 MHz | |
Turn-off Time-Max (toff) | 3500 ns | |
Turn-on Time-Max (ton) | 500 ns | |
VCEsat-Max | 1.5 V |
Alternate Parts for T10W80HDT
This table gives cross-reference parts and alternative options found for T10W80HDT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of T10W80HDT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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S2055AF | TRANSISTOR 8 A, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | Toshiba America Electronic Components | T10W80HDT vs S2055AF |
T2V80HFX | Power Bipolar Transistor, 2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | T10W80HDT vs T2V80HFX |
SDT5904 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, | Solitron Devices Inc | T10W80HDT vs SDT5904 |
SGSF463 | 12A, 450V, NPN, Si, POWER TRANSISTOR, TO-218 | STMicroelectronics | T10W80HDT vs SGSF463 |
SDT3722 | Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, | Solitron Devices Inc | T10W80HDT vs SDT3722 |
SDT3513 | Power Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, | Solitron Devices Inc | T10W80HDT vs SDT3513 |
SPC431 | Power Bipolar Transistor, 5A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Spectrum Control | T10W80HDT vs SPC431 |
TIP641 | 10A, 80V, NPN, Si, POWER TRANSISTOR, TO-3 | Texas Instruments | T10W80HDT vs TIP641 |
SGSF443 | 8A, 450V, NPN, Si, POWER TRANSISTOR, TO-218 | STMicroelectronics | T10W80HDT vs SGSF443 |
SDT3512 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, | Solitron Devices Inc | T10W80HDT vs SDT3512 |