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Transistors / Power Field-Effect Transistors / SUD23N06-31-GE3
Datasheets
SUD23N06-31-GE3 by:

Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Part Details for SUD23N06-31-GE3 by Vishay Intertechnologies

Overview of SUD23N06-31-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SUD23N06-31-GE3

Part # Distributor Description Stock Price Buy
DISTI # 01AC5034
Newark Mosfet, N-Ch, 60V, 21.4A, To-252Aa, Transistor Polarity:N Channel, Continuous Drain Current Id:21.4A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.025Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Vishay SUD23N06-31-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1629
  • 1 $0.9300
  • 10 $0.7630
  • 25 $0.7070
  • 50 $0.6500
  • 100 $0.5940
$0.5940 / $0.9300 Buy Now
DISTI # 29X0559
Newark Mosfet, N Channel, 60V, 21.4A, To-252-3, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:21.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:31.25W Rohs Compliant: Yes |Vishay SUD23N06-31-GE3 RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.4400
  • 4,000 $0.3950
  • 6,000 $0.3810
  • 10,000 $0.3730
$0.3730 / $0.4400 Buy Now
DISTI # SUD23N06-31-GE3
Avnet Americas Trans MOSFET N-CH 60V 9.1A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SUD23N06-31-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks, 0 Days Container: Reel 10000
  • 2,000 $0.4005
  • 4,000 $0.3444
  • 8,000 $0.3390
  • 12,000 $0.3333
  • 16,000 $0.3294
$0.3294 / $0.4005 Buy Now
DISTI # 781-SUD23N06-31-GE3
Mouser Electronics MOSFETs N-Ch MOSFET 60V 31 mohm @ 10V RoHS: Compliant 9547
  • 1 $1.1100
  • 10 $0.7950
  • 100 $0.5530
  • 500 $0.4450
  • 1,000 $0.4090
  • 2,000 $0.3690
  • 4,000 $0.3500
$0.3500 / $1.1100 Buy Now
DISTI # E02:0323_00531410
Arrow Electronics Trans MOSFET N-CH 60V 21.4A 3-Pin(2+Tab) DPAK Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks Date Code: 2439 Europe - 12000
  • 2,000 $0.3801
  • 4,000 $0.3663
$0.3663 / $0.3801 Buy Now
DISTI # V36:1790_09215445
Arrow Electronics Trans MOSFET N-CH 60V 21.4A 3-Pin(2+Tab) DPAK Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks Date Code: 2426 Americas - 6000
  • 2,000 $0.3786
$0.3786 Buy Now
Future Electronics Single N-Channel 60 V 0.031 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 2000
Reel
  • 2,000 $0.3800
  • 4,000 $0.3750
  • 6,000 $0.3700
  • 8,000 $0.3650
  • 10,000 $0.3550
$0.3550 / $0.3800 Buy Now
Future Electronics Single N-Channel 60 V 0.031 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks Container: Reel 0
Reel
  • 2,000 $0.3800
  • 4,000 $0.3750
  • 6,000 $0.3700
  • 8,000 $0.3650
  • 10,000 $0.3550
$0.3550 / $0.3800 Buy Now
DISTI # 85248645
Verical Trans MOSFET N-CH 60V 21.4A 3-Pin(2+Tab) DPAK Min Qty: 2000 Package Multiple: 2000 Date Code: 2439 Americas - 12000
  • 2,000 $0.3875
  • 4,000 $0.3735
$0.3735 / $0.3875 Buy Now
DISTI # 83631723
Verical Trans MOSFET N-CH 60V 21.4A 3-Pin(2+Tab) DPAK Min Qty: 2000 Package Multiple: 2000 Date Code: 2426 Americas - 6000
  • 2,000 $0.3786
$0.3786 Buy Now
DISTI # 83598988
Verical Trans MOSFET N-CH 60V 21.4A 3-Pin(2+Tab) DPAK Min Qty: 2000 Package Multiple: 2000 Date Code: 2427 Americas - 2000
  • 2,000 $0.5419
$0.5419 Buy Now
DISTI # 71241818
Verical Trans MOSFET N-CH 60V 21.4A 3-Pin(2+Tab) DPAK Min Qty: 29 Package Multiple: 1 Date Code: 2335 Americas - 1995
  • 29 $1.0825
  • 50 $0.9525
  • 100 $0.7200
  • 200 $0.6888
  • 500 $0.5638
  • 1,000 $0.5137
$0.5137 / $1.0825 Buy Now
DISTI # SUD23N06-31-GE3
TTI MOSFETs N-Ch MOSFET 60V 31 mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel Americas - 14000
In Stock
  • 2,000 $0.3650
  • 4,000 $0.3470
$0.3470 / $0.3650 Buy Now
DISTI # SUD23N06-31-GE3
TME Transistor: N-MOSFET, unipolar, 60V, 17.1A, 31.25W, DPAK,TO252 Min Qty: 1 1769
  • 1 $0.8790
  • 10 $0.7370
  • 50 $0.6210
  • 100 $0.5710
  • 500 $0.4600
  • 1,000 $0.4410
$0.4410 / $0.8790 Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 15
RFQ
DISTI # SUD23N06-31-GE3
EBV Elektronik Trans MOSFET N-CH 60V 9.1A 3-Pin(2+Tab) DPAK (Alt: SUD23N06-31-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 14 Weeks, 0 Days EBV - 10000
Buy Now
LCSC 60V 21.4A 31m15A10V 3V250uA 1 N-Channel TO-252-2 MOSFETs ROHS 34
  • 1 $1.1133
  • 10 $0.9401
  • 30 $0.8440
  • 100 $0.7369
  • 500 $0.6881
  • 1,000 $0.6677
$0.6677 / $1.1133 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2000 8000
  • 2,000 $0.5597
  • 8,000 $0.5179
$0.5179 / $0.5597 Buy Now

Part Details for SUD23N06-31-GE3

SUD23N06-31-GE3 CAD Models

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SUD23N06-31-GE3 Part Data Attributes

Parametric Data
SUD23N06-31-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SUD23N06-31-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 20 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 9.1 A
Drain-source On Resistance-Max 0.031 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 31.25 W
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SUD23N06-31-GE3

This table gives cross-reference parts and alternative options found for SUD23N06-31-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUD23N06-31-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SUD23N06-31 Power Field-Effect Transistor, 21.4A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SUD23N06-31-GE3 vs SUD23N06-31
SUD23N06-31L-E3 Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SUD23N06-31-GE3 vs SUD23N06-31L-E3
SUD23N06-31 TRANSISTOR 21.4 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Vishay Siliconix SUD23N06-31-GE3 vs SUD23N06-31
Part Number Description Manufacturer Compare
SUM50N06-16L-E3 Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies SUD23N06-31-GE3 vs SUM50N06-16L-E3
IRFZ48STRL Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix SUD23N06-31-GE3 vs IRFZ48STRL
SUD23N06-31 TRANSISTOR 21.4 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Vishay Siliconix SUD23N06-31-GE3 vs SUD23N06-31
IRFZ48SPBF Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies SUD23N06-31-GE3 vs IRFZ48SPBF
IRFZ48SPBF Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier SUD23N06-31-GE3 vs IRFZ48SPBF
IRFZ48STRLPBF Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies SUD23N06-31-GE3 vs IRFZ48STRLPBF
IRFZ48SPBF Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix SUD23N06-31-GE3 vs IRFZ48SPBF
SUD23N06-31 Power Field-Effect Transistor, 21.4A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SUD23N06-31-GE3 vs SUD23N06-31

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