Datasheets
STW52NK25Z by: STMicroelectronics

N-channel 250 V, 0.033 Ohm typ., 52 A, Zener protected SuperMESH Power MOSFET in TO-247 package

Part Details for STW52NK25Z by STMicroelectronics

Overview of STW52NK25Z by STMicroelectronics

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for STW52NK25Z

Part # Distributor Description Stock Price Buy
DISTI # 33R1331
Newark Mosfet, N Channel, 250V, 52A, To-247, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:26A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.75V, Msl:- Rohs Compliant: Yes |Stmicroelectronics STW52NK25Z Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1892
  • 1 $7.3500
  • 10 $6.9100
  • 25 $6.4600
  • 60 $6.0200
  • 120 $5.7400
  • 270 $5.4600
$5.4600 / $7.3500 Buy Now
DISTI # 497-4428-5-ND
DigiKey MOSFET N-CH 250V 52A TO247-3 Min Qty: 1 Lead time: 16 Weeks Container: Tube 364
In Stock
  • 1 $6.0800
  • 30 $4.8550
  • 120 $4.3440
  • 510 $3.8329
  • 1,020 $3.4497
  • 2,010 $3.2325
$3.2325 / $6.0800 Buy Now
DISTI # STW52NK25Z
Avnet Americas Trans MOSFET N-CH 250V 52A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW52NK25Z) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $3.5958
  • 1,200 $3.5231
  • 2,400 $3.4505
  • 3,600 $3.3779
  • 4,800 $3.3052
  • 6,000 $3.2326
  • 60,000 $3.1599
$3.1599 / $3.5958 Buy Now
DISTI # 511-STW52NK25Z
Mouser Electronics MOSFET N-Ch 250 Volt 52 Amp Zener SuperMESH RoHS: Compliant 600
  • 1 $6.0800
  • 10 $5.7400
  • 25 $4.7500
  • 100 $4.3500
  • 250 $3.8400
  • 600 $3.8300
  • 1,200 $3.2300
$3.2300 / $6.0800 Buy Now
STMicroelectronics N-channel 250 V, 33 mOhm typ., 52 A, SuperMESH Power MOSFET in a TO-247 package RoHS: Compliant Min Qty: 1 600
  • 1 $5.9600
  • 10 $5.6300
  • 25 $4.6600
  • 100 $4.2600
  • 250 $3.7600
$3.7600 / $5.9600 Buy Now
Future Electronics N-Channel 250 V 45 mΩ 160 nC Flange Mount SuperMESH™ MOSFET - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 300
Tube
  • 1 $3.6100
  • 30 $3.5200
  • 125 $3.4100
  • 300 $3.3400
  • 1,250 $3.1700
$3.1700 / $3.6100 Buy Now
Future Electronics N-Channel 250 V 45 mΩ 160 nC Flange Mount SuperMESH™ MOSFET - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 100
Tube
  • 1 $3.6100
  • 30 $3.5200
  • 125 $3.4100
  • 300 $3.3400
  • 1,250 $3.1700
$3.1700 / $3.6100 Buy Now
Future Electronics N-Channel 250 V 45 mΩ 160 nC Flange Mount SuperMESH™ MOSFET - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $3.2900
  • 1,200 $3.2400
  • 1,800 $3.2100
  • 2,400 $3.1700
$3.1700 / $3.2900 Buy Now
DISTI # STW52NK25Z
TME Transistor: N-MOSFET, unipolar, 250V, 32.76A, 300W, TO247 Min Qty: 1 0
  • 1 $4.0300
  • 3 $3.6300
  • 10 $3.2100
  • 30 $2.8800
$2.8800 / $4.0300 RFQ
ComSIT USA 250 V, 52 A, 0.033 OHM TO, 247 N CHANNEL ZENER, PROTECTED SUPERMESH MOSFET Power Field-Effect Transistor, 52A I(D), 250V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant Europe - 120
RFQ
DISTI # STW52NK25Z
Avnet Silica Trans MOSFET N-CH 250V 52A 3-Pin(3+Tab) TO-247 Tube (Alt: STW52NK25Z) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 30
Buy Now
DISTI # STW52NK25Z
EBV Elektronik Trans MOSFET N-CH 250V 52A 3-Pin(3+Tab) TO-247 Tube (Alt: STW52NK25Z) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STW52NK25Z

STW52NK25Z CAD Models

STW52NK25Z Part Data Attributes:

STW52NK25Z STMicroelectronics
Buy Now Datasheet
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STW52NK25Z STMicroelectronics N-channel 250 V, 0.033 Ohm typ., 52 A, Zener protected SuperMESH Power MOSFET in TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-247
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 500 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 52 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 208 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STW52NK25Z

This table gives cross-reference parts and alternative options found for STW52NK25Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW52NK25Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF610B_FP001 Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation STW52NK25Z vs IRF610B_FP001
FDP18N50 Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation STW52NK25Z vs FDP18N50
PHD3055L 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 NXP Semiconductors STW52NK25Z vs PHD3055L
STH8NA60 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics STW52NK25Z vs STH8NA60
STD3NA50T4 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics STW52NK25Z vs STD3NA50T4
IPP45N06S4L-08 Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STW52NK25Z vs IPP45N06S4L-08
934057024118 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 NXP Semiconductors STW52NK25Z vs 934057024118
IRF620B Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation STW52NK25Z vs IRF620B
SPP80N06S2L-06 Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STW52NK25Z vs SPP80N06S2L-06
STP75NF75 N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package STMicroelectronics STW52NK25Z vs STP75NF75

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